MM Shahidul Hassan
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shahidul@ewubd.edu

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M. M. Shahidul Hassan

Professor and Vice Chancellor

Ph.D in Electrical Engineering (Clarkson University, New York, USA)
M.Sc. in EEE, Dept. of EEE, Bangladesh University of Engineering and Technology (BUET)
B.Sc. in EE, Dept. of EE, Bangladesh University of Engineering and Technology (BUET)

Teaching
Full time teaching

Dept. of Electrical and Electronic Engineering (EEE), BUET, Dhaka 1205, Bangaldesh

Parttime Teaching
United International University (UIU), Dhaka: 2008-2015
North South University (NSU): 2006-2008

East West University, Mohakhali, Dhaka: 2004-2005

Teaching abroad
USA
Visiting Professor
Summer school–2005, 2004, 2003 and 2002
Dept. of ECE, Clarkson University, Potsdam, New York
Saudi Arabia and Malayisa King Fahd University of Petroleum & Minerals (KFUPM), Dharan, SA
University of TELEKOM (renamed as Multimedia University), Malaysia.
Other Experiences
Attended a training program on Cadence tools for VLSI design (August 20-Sept. 10, 2005), Cadence Tools Design Center, Bangalore, India
Conducted a program on Semiconductor Device Theory for 1st and 2nd batches of National Semiconductor Engineers
National Semiconductor Sdn. Bhd, Melacca, Malaysia, 1998
Attended the School on Materials for Electronics: Growth, Properties and Applications (18 Nov-6 Dec. 1991)
Organized by International Center for Theoretical Physics (ICTP), Trieste, Italy
Attended Research Workshop on Condensed Matter Physics (Jun. 16-August 16,1994), Organized by ICTP, Italy
Conducted a two day workshop on Fire Detection and Alarm System for engineers and technicians working at Garment factories, 2014.

Semiconductor Devices

Journal Publication

International
  1. Yeasir Arafat , Farseem M. Mohammedy , M. M. Shahidul Hassan, “Optical and Other Measurement Techniques of Carrier Lifetime in Semiconductors,” International Journal of Optoelectronic Engineering, Vol. 2, No. 2, pp. 5-11, 2012
  2. M M Shahidul Hassan, Orchi Hassan and Md. Iqbal Bahar Chowdhury, “Effect of Majority Carrier Current on the Base Transit Time of A BJT,” Journal of Electron Devices ,Vol. 10, pp. 511-514, 2011.
  3. M M Shahidul Hassan and Orchi Hassan, “Minority Carrier Profile and Storage Time of a Nonuniformly Doped n-Si Schottky Barrier Diode,” Journal of Electron Devices, Vol. 11, pp. 609-615, 2011.
  4. M M Shahidul Hassan and Orchi Hassan, “Depletion Layer of a Nonuniformly Doped Schottky barrier Diode,” Journal of Electron Devices, Vol. 14, pp. 1151-1154, 2012.
  5. M. M. Shahidul Hassan and Md. Waliullah Khan, “Base Transit Time Model Considering Field Dependent Mobility for BJTs Operating at High-Level Injection,” IEEE Trans. On Electron Devices, Vol. 53, No. 10, pp. 2532-2539, Oct., 2006.
  6. M. M. Shahidul Hassan, Ziaur Rahman Khan and Md. Touhidur Rahman, “Base Transit Time of a Bipolar Transistor considering Field Dependent Mobility,” International Journal of Electronics, Vol. 93, No. 11, pp. 723-735 November 2006.
  7. M. M. Shahidul Hassan, Touhidur Rahman and Md. Ziaur Rahman Khan, “Analytical model for base transit time of a bipolar transistor with Gaussian doped base,” Solid-State Electron.,Vol. 50, No. 3, pp. 327-332 , 2006.
  8. Md. Anwarul Abedin   and Dr. M. M. Shahidul Hassan, “Base Transit Time Model of a Bipolar Junction Transistor Considering Kirk Effect,” Journal of The Institution of Engineers, Singapore, Vol. 45, Issue 5, 2005.
  9. Md. Anwarul, Abedin and M. M., Shahidul Hassan, Analytical base transit time model of uniformly doped base bipolar transistors considering Kirk effect, The Journal of the Institution of Engineers, Malaysia, vol. 66(3), 2005, pages 42-46
  10. Md. Z. R. and M.M.S. Hassan and T.Rahman and A. k. M. Ahsan, “Expression for Base Transit Time in Bipolar Transistors,” Int. J. Electronics, Vol. 92, No. 4, pp. 215-229, April 2005.
  11. M. M. Shahidul Hassan , A. H. M. A. Rahim ,“Induced Base Transit Time of an Epitaxial n+pn-n+ Bipolar Transistor in Saturation,” Solid-State Electronics, Vol. 47, No.6, pp. 943-950, 2003.
  12. M. M. Shahidul Hassan,“Base Transit Time of an Epitaxial n+pn-n+ Bipolar Transistor Considering Kirk Effect,” Int. J. Microelectronics and Reliability, Vol. 43, No. 2, pp. 327-332, 2003.
  13. M. M. Shahidul Hassan and S. Hasibul Majid, “Electrical Characteristics of an Epitaxial Schottky Barrier Diode,” International Journal of Electronics, Vol. 88, No. 9, pp. 957-967, 2001.
  14. M. M. Shahidul Hassan and A. H. Khondoker, “New Expression for Base Transit Time in a Bipolar Transistor for all levels of Injection,” Microelectronics and Reliability, Vol. 41, No. 1, pp. 137-140, 2001.
  15. M. M. Shahidul Hassan, “Analytical Base Transit Time of Integrated BipolarTransistors in Quasi-saturation and Hard-saturation,” IEE Proc.-Circuits, Devices and Systems, 147, No. 2, pp. 129-132, 2000.
  16. M. M. Shahidul Hassan, “Characteristics of Epitaxial Schottky Barrier Diode for all Levels of Injection,” Solid-State Electronics, Vol. 44, No. 6, pp.1111-1116, 2000.
  17. M. M. Shahidul Hassan, “Modelling of Lightly Doped Collector of a BipolarTransistor Operating in Quasi-saturation Region,” Int. Journal of Electronics, Vol.86, No.1, pp. 1-14, 1999.
  18. M. M. Shahidul Hassan and M. A. Choudhury, “New Formulation of the Collector Current and Current Gain Relations for Design Purposes of Power Transistors Switches,” IEE Proc. – Circuits, Devices and Systems, Vol. 142, No.2, pp. 113-119, 1995.
  19. M. M. Shahidul Hassan and Md. Aynal Haque, “Evaluation of Optimal Collector Parameters of a Transistor with Burried Layer,” Int. J. Electronics, Vol. 75, No. 3, pp. 437-440, 1993.
  20. M. M. Shahidul Hassan, Golam Rasul Chowdhury and Zahirul Alam, “Breakdown Voltage of High-Voltage Bipolar Transistors,” Solid-State Electronics, Vol. 34, No. 10, pp. 1109-1111, 1991.
  21. M. M. Shahidul Hassan and H. Domingos, “Design of Optimal Values of Parameters of Epitaxial Bipolar Transistor Switches,” Int. J. Electronics (IJE), Vol. 71, No. 5, pp. 745-755, 1991.
  22. M. M. Shahidul Hassan and A. Habib, “Avalanche Breakdown Voltages of Linearly Graded Si Junctions,” IJE Vol.71, No.3, pp. 403- 409, 1991.
  23. M. M. Shahidul Hassan and H. Domingos, “Breakdown Voltages of Base-Collector Junctions of Medium- and Low -Voltage Graded Collector Transistors,” Int. J. Electronics, Vol. 70, No. 1, pp. 69-75, 1991.
  24. M. M. Shahidul Hassan and H. Domingos, “Breakdown Voltages of Base Collector Junctions of High-Voltage Power Transistors with Graded Collectors,” Int. J. Electronics, Vol. 70, No. 1, pp. 77-83, 1991.
  25. M. M. Shahidul Hassan and H. Domingos,“Control of Current Mode Second Breakdown in Transistors through Use of Double-Graded Collectors,” Solid-State Electronics, Vol. 33, No. 10, pp. 1217-1221, 1991.
  26. M. M. Shahidul Hassan and H. Domingos, “Calculation of Avalanche Breakdown Voltages of Abrupt Si P-N Junctions,” Int. J. Electronics, Vol. 68, No. 4, pp. 533- 537, 1990.
  27. M. M. Shahidul Hassan and H. Domingos, “Estimate of Peak Voltage for Triggering Current Mode Second Breakdown of BJTs during Inductive Turnoff,” Int. J. Electronics,Vol. 66, No. 3, pp. 361-369, 1989.
  28. M. M. Shahidul Hassan and H. Domingos, “Estimate of Minimum Current for Inducing Current Mode Second Breakdown in Reverse Biased Epitaxial Bipolar Transistors,” Int. J. Electronics, Vol. 66, No. 3, pp. 371-377, 1989.
  29. M. M. Shahidul Hassan and H. Domingos, “Increase of Critical Current Density and Voltage for Triggering Avalanche Injection through Use of Graded Collector Doping,” Int. J. Microelectronics and Reliability, Vol. 29, No 2, pp. 217-226, 1989.
National
  1. Yeasir Arafat, Md. Jannatul Ferdous and M . M. Shahidul Hassan, “ Effect of Temperature on the Fill Factor of a Heterojunction (CIGS) Solar Cell,” JIEB, Vol. EE 38, No. 11, December, 2012.
  2. M M Shahidul Hassan, Orchi Hassan and Md. Azharul Haque, “Minority Carrier Profile and Storage Time of a Schottky Barrier Diode for All levels of injection,” JIEB, Vol 37, No 2, pp. 15-21, 2011.
  3. Md.Waliullah Khan Nomani and M. M. Shahidul Hassan , “A New model of base transit time for BJTs operating at high level of injection,” JIEB, 2006.
  4. M. M. Shahidul Hassan and M. Azharul Haque, “Base Transit Time of a High Speed NPN Transistor Considering Hole current,” JIEB, Vol. EE 33, No. 1& II, pp. 120-124, Decber 2006.
  5. Touhidur Rahman, Md. Ziaur Rahman Khan, Hassan MMS, “Base Transit Time of a Bipolar Transistor with Gaussian Base Doping Profile”, IEB Journal of Electrical Engineering, Vol. EE 31, No. I & II), pp. 6 – 9, Dec 2004
  6. Md. Aynal Haque and M. M. Shahidul Hassan, “Design of a Graded Collector of High Voltage Bipolar Transistors,” JIEB, Vol. EE 27, No. 1, pp. 57-61, 1999.
  7. Mohammad Zahangir Kabir and M. M. Shahidul Hassan, “Determination ofExcited Energy States of Submicron Inversion MOSFETs by Variational Method,” JIEB, Vol. EE24, pp. 61-67, 1996.
  8. Md. Nasim Ahmed Dewan and M. M. Shahidul Hassan, “ Modeling of Bipolar Junction Transistor Thermal Effects,” JIEB, Vol. EE24, pp.19-26, 1996.
  9. M. M. Shahidul Hassan and Md. Kamrul Hassan , “Dependence of Second Breakdown on Load Inductance and Reverse Base Drive,” JIEB, Vol. EE23, pp. 29-36, 1995.
  10. Md. Tanvir Quddus and M. M. Shahidul Hassan, “Analytical Modelling of Breakdown in Short Channel MOSFET’s”, JIEB, Vol. EE 23, pp. 1-8, 1995.
  11. M. M. Shahidul Hassan, “Optimum Design of Darlington Power Transistor Switches,” JIEB, Vol. 22, No. 1, pp. 215-222 , 1994.
  12. M. M. Shahidul Hassan and G.. R. Choudhury, “ Effect of Doping on Efficiency of MIS Inversion Layer Solar Cells,”JIEB, Vol. 20, pp. 33-39, 1992.
  13. M. M. Shahidul Hassan and M. A. Choudhury, “ A Model for Designing Power Transistor Switches Driven in Hard Saturation in its On-State,” JIEB, Vol. 20, No. 3, pp. 29-35, 1992.
  14. M. M. Shahidul Hassan, M. M. Rahman and S. M. Sohel Imtiaz, “An Analytical Model for Current Mode Second Breakdown in Epitaxial Bipolar Transistor under Open-Base Operating Conditions,” JIEB, Vol. 18, pp. 23-34, 1990.
  15. M. M. Shahidul Hassan and M. A. Choudhury, “Effect of Low-High junction on the Current-Gain Product of High-Voltage Power Transistors Operating in Saturation Region,” JIEBS, Vol. 3, pp. 19-22, 1993.
  16. M. M. Shahidul Hassan, “Evaluation of Optimal Values of Double-Graded Collector Parameters of High-Voltage Transistors,” JBES, Vol. 2, No. 1, pp. 37-40, 1992.
  17. M. M. Shahidul Hassan and M. Sohel Imtiaz, “Current- Voltage Characteristics of a Reverse Biased Transistor Driven in Current Mode Second Breakdown,” JBES, Vol. 1, No. 1, pp. 17-23, 1991.
  18. M. M. Shahidul Hassan and Golam Rasul Chowdhury, “Doping Dependence of Current Mode Second Breakdown in Epitaxial Bipolar Transistor,” JBES,Vol. 1, No. 1, pp. 27-30, 1991.

International Conferences

  1. M M Shahidul Hassan and Orchi Hassan,“ Injection Ratio and Storage Time of a Non-uniformly Doped Schottky Barrier Diode.” International Conference on Electrical and Computer Engineering(ICECE), Dhaka, Bangladesh, pp. 127–130, Dec.18-20, 2012.
  2. Md. Imran Momtaz and M. M. Shahidul Hassan, “ Analytical expression for storage time and injection ratio of a non-uniformly doped n-Si SBD,” International Conference on Devices, Circuits and Systems (ICDCS – 2012), Karuny University, Coimbatore, India,   March 15-16, 2012.
  3. Chowdhury, M. I. B. and Hassan, M. M. Shahidul, “Analytical modeling of base transit time considering recombination in the non-uniformly doped base, International Symposium on Humanities, Science & Engineering Research (SHUSER), Kuala Lampur, Malaysia, pp. 117 – 122, June 05-07, 2011.
  4. Islam, S.M.M., Arafat, Y, Chowdhury, I.B., Khan, M.Z.R. and Hassan, M.M.S., “Base transit time of a Heterojunction Bipolar Transistor with Gaussian doped Base,” International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, pp. 127 – 130, Dec. 18-20, 2010.
  5. Chowdhury, M.I.B. and Hassan, M.M.S.,“Analysis of base transit time for a bipolar junction transistor considering base current,” International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, pp. 20 – 24 , Dec. 18-20, 2010.
  6. Hassan, M.M.S. and Chowdhury, M.I.B., “Effect of majority carrier current on the base transit time of a BJT for exponential doping,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, pp. 1 – 4, Dec. 15-17, 2010.
  7. Arafat, Y., Khan, M.Z.R., Hassan, M.M.S., “Analytical modeling of base transit time for a Si1-yGey heterojunction bipolar transistor,” Electron Devices and Solid-State Circuits, EDSSC 2009. IEEE International Conference of , 25-27 Dec. 358 – 361, 2009.
  8. Chowdhury, M.I.B. and Hassan, M.M.S. “Base transit time of a bipolar junction transistor considering majority-carrier current”, International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, pp. 133 – 138 , Dec. 20-22, 2008.
  9. Md. Ziaur Rahman Khan, M. M. Shahidul Hassan and Touhidur Rahman, “New Expression for Base Transit Time in an Exponentially Doped Base Bipolar Transistor for All Levels of Injection,” Proceedings of the 15th International Conference on Microelectronics, ICM 2003, pp. 340 – 343, December 9 -11, 2003, Cairo, Egypt, ISBN number : 977-05-2010-1, IEEE Catalog number : 03EX686.
  10. A New Technique for Determining Base Transit Time of a Bipolar Junction Transistor Electrical and Computer Engineering, International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, 19-21 Dec. 56 – 59, 2006.
  11. Touhidur Rahman, M. M. Shahidul Hassan and Md. Ziaur Rahman Khan, “Analytical Model for Base Transit Time of a Bipolar Transistor with Gaussian-Doped Base,” 3rd International Conference on Electrical & Computer Engineering ICECE 2004, pp. 478 – 481, Dhaka, Bangladesh, 28-30 December 2004, ISBN: 984-32-1804-4.
  12. M. M. Shahidul Hassan, Md. Ziaur Rahman Khan and Touhidur Rahman, “Analytical Base Transit Time of a Bipolar Transistor Considering Field Dependent Mobility,” 3rd International Conference on Electrical & Computer Engineering, ICECE 2004, pp. 482 – 485, Dhaka, Bangladesh, 28-30 December 2004, ISBN: 984-32-1804-4.
  13. M. Z. Rahman Khan and M.M.S. Hassan and Touhidur Rahman, “New Expression for Base Transit Time in an Exponentially Doped Base Bipolar Transistor for All Levels of Injection,” proceedings of the 15th international conference for Microelectronics (ICM03), Cairo, Egypt, 9-11 December 2003, pp 340-343.
  14. Md. Ziaur Rahman and M. M. S. Hassan, “Analytical Expression of Collector Current Density and Base Transit time in an Exponential Doped Base Bipolar Transistor for all levels of Injection,” ICECE2002, 26-28 December 2002, Bangladesh, pp. 120-123.
  15. M. M. Shahidul Hassan and Ashok Kumar Karmokar, “Diffusion Capacitance of an Epitaxial High Barrier Schottky Diode,” ICECE2002, 26-28 December 2002, Bangladesh, pp. 124-127.
  16. Farseem M. Mohammedy and M. M. S. Hassan, “A Distributed Transmission Line Model for the Base Transit Time of a nonuniformly Doped Bipolar Junction Transistor,” ICECE2002, 26-28 December 2002, Bangladesh, pp. 132-135.
  17. M. A. Abedin and M. M. S. Hassan, “Analytical Base Transit Time Model of a Bipolar Junction Transistor Considering Kirk Effect,” IECE2002, 26-28 December 2002, Bangladesh, pp. 136-129.
  18. M. M. Shahidul Hassan, “ Base Transit Time of a Bipolar Transistor Considering Field Dependent Mobility,” IEB Conference, pp. 102-106, October 23-25, 2002.
  19. M. A. Abedin and M. M. Shahidul Hassan, “Analytical Base Transit Time Model of a Uniformly Doped Base Bipolar Transistors Considering Kirk Effect,” IEB Conference, pp. 65-69, October 22-25, 2002.
  20. M. M. Shahidul Hassan, A. N. Khondker and H. Domingos, “ Conduction Mechanism in BJT’s during Electrical Overstress,” EOS/ESD Symposium Proc., USA, pp. 280-286, 1987.
  21. D. J. Wilson, H. Domingos and M. M. Shahidul Hassan,“Electrical Overstress in NMOS Silicided Devices,” EOS/ESD Symposium Proc., USA, pp. 265-273, 1987.
  22. M. M. Shahidul Hassan, A. N. Khondker and H. Domingos,“Effect of Graded California, USA, EOS/ESD Symposium Proc., pp.70-76, 1988.
  23. M. M. Shahidul Hassan and H. Domingos, “The Double Graded Transistor and Its Beneficial Effect on Resistance to Current Mode Second Breakdown,” EOS/ESD Symposium Proc., USA, pp. 127-135, 1989.

Papers on Education

British Council, Sri Lanka organized a dialogue on ‘Transforming Higher Education in South Asian’ on 18-19 June 2013.

Presented a paper titled ‘Requirement of a National Framework for Overseas Higher Education Delivery Models’, parallel session 4, 18 June 2013, Cinammon Grand Hotel, Colombo 3, Srilanka.

Attended a workshop on  “Regional Accreditation of Engineering Education, Qualifications and Mobility of Engineers in Asia Pacific and Africa”,  27 May 2015, Kula Lumpur, Malaysia. Organizer: Federation of Engineering Institutions of Asia and the Pacific (FEIAP).

Published

Journal

1. M. M. Shahidul Hassan, “Revamping Higher Education in Bangladesh”, International Journal of Management and Applied Science, Vol. 2, Issue 12, Dec 2016.

Conference

  1. M. M. Shahidul Hassan, “National framework for engineering education delivery models in South Asia,” International Conference on Education Scocial Sciences and Humanities (SOCIO-INT15),  Istambul,Turkey, 8-10 July 2015.
  2. M M Shahidul Hassan,,”Challenges and Opportunities for Engineering Education in Bangladesh,” IEOM Symposium on Global Engineering Education, December 19, 2015, Dhaka, Bangladesh..
  3. M. M. Shahidul Hassan, “Outcome Based Engineering Education: A paradigm shift.” ICECE 2012 Conference, Dhaka, Bangladesh.
  4. M M Shahidul Hassan, “ On Challenges of Implementing Outcome Based Engineering Education in Universities in Bangladesh”, pp. 362 – 364, 20-22 Dec. 2012.
  5. M. M. Shahidul Hassan, “Implementing Outcome Based Engineering Education in Bangladesh,” Advanced Education and Management [ICAEM2014], Jan 04 –Jan 06 2014, Beijing, China

Published in the local daily newspapers

  1. M. M. Shahidul Hassan, “How can we build a knowledge-based economy? ,” the Daily Star, Opinion Section, Friday, January 6, 2017.
  2. M. M. Shahidul Hassan, “Global Perspectives on Higher Education in Bangladesh,” The Daily Sun, p-6, Wednesday, 8 June, 2016, http://www.daily-sun.com/printversion/details/142418.
  3. M. M. Shahidul Hassan, “Redesigning Higher Education Curriculum to Meet International Standards,”  The Daily Sun, Thursday, 3 June, 2016.
  1. এম এম শহিদুল হাসান, “আন্তর্জাতিক মানের সঙ্গে সামঞ্জস্যপূর্ণ হতে হবে,” মে ১২, ২০১৬.
  2. M. M. Shahidul Hassan, “Quality Education: Our Goal, Our Commitment,” Association of BUET Alumni News Latter, 1st sissue, Jan. 2016.
  3. M. M. Shahidul Hassan, “Towards harmonisation of higher education in South Asian,” Campis Chronicle, The New Nation, 21 July 2013.
  4. M. M. Shahidul Hassan, “A homogenous system for South Asian higher education”, bdchronicle, The New Nation, 08 Jul, 2013,
  5. M. M. Shahidul Hassan, “Outcome based education: Challenges in implementation,” The Daily Sun, Saturday 12 January 2013.
  6. M. M. Shahidul Hassan, Outcome based Engineering education : A paradigm shift,” The New Nation, Monday, 01 October, 2012.
  7. M M. Shahidul Hassan, “Outcome-based education: Learning’s new paradigm,” The Independent, 07 August 2012.
  8. Professor M M Shahidul Hassan, “ Providing Quality Engineering Education,” Nation, Friday, 12 June 2009.
  9. এম এম শহীদুল হাসান, “ আমেরিকার বিশ্ববিদ্যালয়ে পড়ানোর অভিজ্ঞতা,” নয়া দিগন্ত, ৪ জুলাই  ২০০৯
  10. এম এম শহীদুল হাসান,“ তরুন প্রজন্মের  বড় অংশ প্রকৌশল শিক্ষা নিতে আগ্রহী,” জনকন্ঠ, বাংলাদেশ, ৩০ মার্চ ২০০৯
+ Academic Background

Ph.D in Electrical Engineering (Clarkson University, New York, USA)
M.Sc. in EEE, Dept. of EEE, Bangladesh University of Engineering and Technology (BUET)
B.Sc. in EE, Dept. of EE, Bangladesh University of Engineering and Technology (BUET)

+ Professional Experience
Teaching
Full time teaching

Dept. of Electrical and Electronic Engineering (EEE), BUET, Dhaka 1205, Bangaldesh

Parttime Teaching
United International University (UIU), Dhaka: 2008-2015
North South University (NSU): 2006-2008

East West University, Mohakhali, Dhaka: 2004-2005

Teaching abroad
USA
Visiting Professor
Summer school–2005, 2004, 2003 and 2002
Dept. of ECE, Clarkson University, Potsdam, New York
Saudi Arabia and Malayisa King Fahd University of Petroleum & Minerals (KFUPM), Dharan, SA
University of TELEKOM (renamed as Multimedia University), Malaysia.
Other Experiences
Attended a training program on Cadence tools for VLSI design (August 20-Sept. 10, 2005), Cadence Tools Design Center, Bangalore, India
Conducted a program on Semiconductor Device Theory for 1st and 2nd batches of National Semiconductor Engineers
National Semiconductor Sdn. Bhd, Melacca, Malaysia, 1998
Attended the School on Materials for Electronics: Growth, Properties and Applications (18 Nov-6 Dec. 1991)
Organized by International Center for Theoretical Physics (ICTP), Trieste, Italy
Attended Research Workshop on Condensed Matter Physics (Jun. 16-August 16,1994), Organized by ICTP, Italy
Conducted a two day workshop on Fire Detection and Alarm System for engineers and technicians working at Garment factories, 2014.
+ Research Interest

Semiconductor Devices

+ Selected Publications

Journal Publication

International
  1. Yeasir Arafat , Farseem M. Mohammedy , M. M. Shahidul Hassan, “Optical and Other Measurement Techniques of Carrier Lifetime in Semiconductors,” International Journal of Optoelectronic Engineering, Vol. 2, No. 2, pp. 5-11, 2012
  2. M M Shahidul Hassan, Orchi Hassan and Md. Iqbal Bahar Chowdhury, “Effect of Majority Carrier Current on the Base Transit Time of A BJT,” Journal of Electron Devices ,Vol. 10, pp. 511-514, 2011.
  3. M M Shahidul Hassan and Orchi Hassan, “Minority Carrier Profile and Storage Time of a Nonuniformly Doped n-Si Schottky Barrier Diode,” Journal of Electron Devices, Vol. 11, pp. 609-615, 2011.
  4. M M Shahidul Hassan and Orchi Hassan, “Depletion Layer of a Nonuniformly Doped Schottky barrier Diode,” Journal of Electron Devices, Vol. 14, pp. 1151-1154, 2012.
  5. M. M. Shahidul Hassan and Md. Waliullah Khan, “Base Transit Time Model Considering Field Dependent Mobility for BJTs Operating at High-Level Injection,” IEEE Trans. On Electron Devices, Vol. 53, No. 10, pp. 2532-2539, Oct., 2006.
  6. M. M. Shahidul Hassan, Ziaur Rahman Khan and Md. Touhidur Rahman, “Base Transit Time of a Bipolar Transistor considering Field Dependent Mobility,” International Journal of Electronics, Vol. 93, No. 11, pp. 723-735 November 2006.
  7. M. M. Shahidul Hassan, Touhidur Rahman and Md. Ziaur Rahman Khan, “Analytical model for base transit time of a bipolar transistor with Gaussian doped base,” Solid-State Electron.,Vol. 50, No. 3, pp. 327-332 , 2006.
  8. Md. Anwarul Abedin   and Dr. M. M. Shahidul Hassan, “Base Transit Time Model of a Bipolar Junction Transistor Considering Kirk Effect,” Journal of The Institution of Engineers, Singapore, Vol. 45, Issue 5, 2005.
  9. Md. Anwarul, Abedin and M. M., Shahidul Hassan, Analytical base transit time model of uniformly doped base bipolar transistors considering Kirk effect, The Journal of the Institution of Engineers, Malaysia, vol. 66(3), 2005, pages 42-46
  10. Md. Z. R. and M.M.S. Hassan and T.Rahman and A. k. M. Ahsan, “Expression for Base Transit Time in Bipolar Transistors,” Int. J. Electronics, Vol. 92, No. 4, pp. 215-229, April 2005.
  11. M. M. Shahidul Hassan , A. H. M. A. Rahim ,“Induced Base Transit Time of an Epitaxial n+pn-n+ Bipolar Transistor in Saturation,” Solid-State Electronics, Vol. 47, No.6, pp. 943-950, 2003.
  12. M. M. Shahidul Hassan,“Base Transit Time of an Epitaxial n+pn-n+ Bipolar Transistor Considering Kirk Effect,” Int. J. Microelectronics and Reliability, Vol. 43, No. 2, pp. 327-332, 2003.
  13. M. M. Shahidul Hassan and S. Hasibul Majid, “Electrical Characteristics of an Epitaxial Schottky Barrier Diode,” International Journal of Electronics, Vol. 88, No. 9, pp. 957-967, 2001.
  14. M. M. Shahidul Hassan and A. H. Khondoker, “New Expression for Base Transit Time in a Bipolar Transistor for all levels of Injection,” Microelectronics and Reliability, Vol. 41, No. 1, pp. 137-140, 2001.
  15. M. M. Shahidul Hassan, “Analytical Base Transit Time of Integrated BipolarTransistors in Quasi-saturation and Hard-saturation,” IEE Proc.-Circuits, Devices and Systems, 147, No. 2, pp. 129-132, 2000.
  16. M. M. Shahidul Hassan, “Characteristics of Epitaxial Schottky Barrier Diode for all Levels of Injection,” Solid-State Electronics, Vol. 44, No. 6, pp.1111-1116, 2000.
  17. M. M. Shahidul Hassan, “Modelling of Lightly Doped Collector of a BipolarTransistor Operating in Quasi-saturation Region,” Int. Journal of Electronics, Vol.86, No.1, pp. 1-14, 1999.
  18. M. M. Shahidul Hassan and M. A. Choudhury, “New Formulation of the Collector Current and Current Gain Relations for Design Purposes of Power Transistors Switches,” IEE Proc. – Circuits, Devices and Systems, Vol. 142, No.2, pp. 113-119, 1995.
  19. M. M. Shahidul Hassan and Md. Aynal Haque, “Evaluation of Optimal Collector Parameters of a Transistor with Burried Layer,” Int. J. Electronics, Vol. 75, No. 3, pp. 437-440, 1993.
  20. M. M. Shahidul Hassan, Golam Rasul Chowdhury and Zahirul Alam, “Breakdown Voltage of High-Voltage Bipolar Transistors,” Solid-State Electronics, Vol. 34, No. 10, pp. 1109-1111, 1991.
  21. M. M. Shahidul Hassan and H. Domingos, “Design of Optimal Values of Parameters of Epitaxial Bipolar Transistor Switches,” Int. J. Electronics (IJE), Vol. 71, No. 5, pp. 745-755, 1991.
  22. M. M. Shahidul Hassan and A. Habib, “Avalanche Breakdown Voltages of Linearly Graded Si Junctions,” IJE Vol.71, No.3, pp. 403- 409, 1991.
  23. M. M. Shahidul Hassan and H. Domingos, “Breakdown Voltages of Base-Collector Junctions of Medium- and Low -Voltage Graded Collector Transistors,” Int. J. Electronics, Vol. 70, No. 1, pp. 69-75, 1991.
  24. M. M. Shahidul Hassan and H. Domingos, “Breakdown Voltages of Base Collector Junctions of High-Voltage Power Transistors with Graded Collectors,” Int. J. Electronics, Vol. 70, No. 1, pp. 77-83, 1991.
  25. M. M. Shahidul Hassan and H. Domingos,“Control of Current Mode Second Breakdown in Transistors through Use of Double-Graded Collectors,” Solid-State Electronics, Vol. 33, No. 10, pp. 1217-1221, 1991.
  26. M. M. Shahidul Hassan and H. Domingos, “Calculation of Avalanche Breakdown Voltages of Abrupt Si P-N Junctions,” Int. J. Electronics, Vol. 68, No. 4, pp. 533- 537, 1990.
  27. M. M. Shahidul Hassan and H. Domingos, “Estimate of Peak Voltage for Triggering Current Mode Second Breakdown of BJTs during Inductive Turnoff,” Int. J. Electronics,Vol. 66, No. 3, pp. 361-369, 1989.
  28. M. M. Shahidul Hassan and H. Domingos, “Estimate of Minimum Current for Inducing Current Mode Second Breakdown in Reverse Biased Epitaxial Bipolar Transistors,” Int. J. Electronics, Vol. 66, No. 3, pp. 371-377, 1989.
  29. M. M. Shahidul Hassan and H. Domingos, “Increase of Critical Current Density and Voltage for Triggering Avalanche Injection through Use of Graded Collector Doping,” Int. J. Microelectronics and Reliability, Vol. 29, No 2, pp. 217-226, 1989.
National
  1. Yeasir Arafat, Md. Jannatul Ferdous and M . M. Shahidul Hassan, “ Effect of Temperature on the Fill Factor of a Heterojunction (CIGS) Solar Cell,” JIEB, Vol. EE 38, No. 11, December, 2012.
  2. M M Shahidul Hassan, Orchi Hassan and Md. Azharul Haque, “Minority Carrier Profile and Storage Time of a Schottky Barrier Diode for All levels of injection,” JIEB, Vol 37, No 2, pp. 15-21, 2011.
  3. Md.Waliullah Khan Nomani and M. M. Shahidul Hassan , “A New model of base transit time for BJTs operating at high level of injection,” JIEB, 2006.
  4. M. M. Shahidul Hassan and M. Azharul Haque, “Base Transit Time of a High Speed NPN Transistor Considering Hole current,” JIEB, Vol. EE 33, No. 1& II, pp. 120-124, Decber 2006.
  5. Touhidur Rahman, Md. Ziaur Rahman Khan, Hassan MMS, “Base Transit Time of a Bipolar Transistor with Gaussian Base Doping Profile”, IEB Journal of Electrical Engineering, Vol. EE 31, No. I & II), pp. 6 – 9, Dec 2004
  6. Md. Aynal Haque and M. M. Shahidul Hassan, “Design of a Graded Collector of High Voltage Bipolar Transistors,” JIEB, Vol. EE 27, No. 1, pp. 57-61, 1999.
  7. Mohammad Zahangir Kabir and M. M. Shahidul Hassan, “Determination ofExcited Energy States of Submicron Inversion MOSFETs by Variational Method,” JIEB, Vol. EE24, pp. 61-67, 1996.
  8. Md. Nasim Ahmed Dewan and M. M. Shahidul Hassan, “ Modeling of Bipolar Junction Transistor Thermal Effects,” JIEB, Vol. EE24, pp.19-26, 1996.
  9. M. M. Shahidul Hassan and Md. Kamrul Hassan , “Dependence of Second Breakdown on Load Inductance and Reverse Base Drive,” JIEB, Vol. EE23, pp. 29-36, 1995.
  10. Md. Tanvir Quddus and M. M. Shahidul Hassan, “Analytical Modelling of Breakdown in Short Channel MOSFET’s”, JIEB, Vol. EE 23, pp. 1-8, 1995.
  11. M. M. Shahidul Hassan, “Optimum Design of Darlington Power Transistor Switches,” JIEB, Vol. 22, No. 1, pp. 215-222 , 1994.
  12. M. M. Shahidul Hassan and G.. R. Choudhury, “ Effect of Doping on Efficiency of MIS Inversion Layer Solar Cells,”JIEB, Vol. 20, pp. 33-39, 1992.
  13. M. M. Shahidul Hassan and M. A. Choudhury, “ A Model for Designing Power Transistor Switches Driven in Hard Saturation in its On-State,” JIEB, Vol. 20, No. 3, pp. 29-35, 1992.
  14. M. M. Shahidul Hassan, M. M. Rahman and S. M. Sohel Imtiaz, “An Analytical Model for Current Mode Second Breakdown in Epitaxial Bipolar Transistor under Open-Base Operating Conditions,” JIEB, Vol. 18, pp. 23-34, 1990.
  15. M. M. Shahidul Hassan and M. A. Choudhury, “Effect of Low-High junction on the Current-Gain Product of High-Voltage Power Transistors Operating in Saturation Region,” JIEBS, Vol. 3, pp. 19-22, 1993.
  16. M. M. Shahidul Hassan, “Evaluation of Optimal Values of Double-Graded Collector Parameters of High-Voltage Transistors,” JBES, Vol. 2, No. 1, pp. 37-40, 1992.
  17. M. M. Shahidul Hassan and M. Sohel Imtiaz, “Current- Voltage Characteristics of a Reverse Biased Transistor Driven in Current Mode Second Breakdown,” JBES, Vol. 1, No. 1, pp. 17-23, 1991.
  18. M. M. Shahidul Hassan and Golam Rasul Chowdhury, “Doping Dependence of Current Mode Second Breakdown in Epitaxial Bipolar Transistor,” JBES,Vol. 1, No. 1, pp. 27-30, 1991.

International Conferences

  1. M M Shahidul Hassan and Orchi Hassan,“ Injection Ratio and Storage Time of a Non-uniformly Doped Schottky Barrier Diode.” International Conference on Electrical and Computer Engineering(ICECE), Dhaka, Bangladesh, pp. 127–130, Dec.18-20, 2012.
  2. Md. Imran Momtaz and M. M. Shahidul Hassan, “ Analytical expression for storage time and injection ratio of a non-uniformly doped n-Si SBD,” International Conference on Devices, Circuits and Systems (ICDCS – 2012), Karuny University, Coimbatore, India,   March 15-16, 2012.
  3. Chowdhury, M. I. B. and Hassan, M. M. Shahidul, “Analytical modeling of base transit time considering recombination in the non-uniformly doped base, International Symposium on Humanities, Science & Engineering Research (SHUSER), Kuala Lampur, Malaysia, pp. 117 – 122, June 05-07, 2011.
  4. Islam, S.M.M., Arafat, Y, Chowdhury, I.B., Khan, M.Z.R. and Hassan, M.M.S., “Base transit time of a Heterojunction Bipolar Transistor with Gaussian doped Base,” International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, pp. 127 – 130, Dec. 18-20, 2010.
  5. Chowdhury, M.I.B. and Hassan, M.M.S.,“Analysis of base transit time for a bipolar junction transistor considering base current,” International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, pp. 20 – 24 , Dec. 18-20, 2010.
  6. Hassan, M.M.S. and Chowdhury, M.I.B., “Effect of majority carrier current on the base transit time of a BJT for exponential doping,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, pp. 1 – 4, Dec. 15-17, 2010.
  7. Arafat, Y., Khan, M.Z.R., Hassan, M.M.S., “Analytical modeling of base transit time for a Si1-yGey heterojunction bipolar transistor,” Electron Devices and Solid-State Circuits, EDSSC 2009. IEEE International Conference of , 25-27 Dec. 358 – 361, 2009.
  8. Chowdhury, M.I.B. and Hassan, M.M.S. “Base transit time of a bipolar junction transistor considering majority-carrier current”, International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, pp. 133 – 138 , Dec. 20-22, 2008.
  9. Md. Ziaur Rahman Khan, M. M. Shahidul Hassan and Touhidur Rahman, “New Expression for Base Transit Time in an Exponentially Doped Base Bipolar Transistor for All Levels of Injection,” Proceedings of the 15th International Conference on Microelectronics, ICM 2003, pp. 340 – 343, December 9 -11, 2003, Cairo, Egypt, ISBN number : 977-05-2010-1, IEEE Catalog number : 03EX686.
  10. A New Technique for Determining Base Transit Time of a Bipolar Junction Transistor Electrical and Computer Engineering, International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, 19-21 Dec. 56 – 59, 2006.
  11. Touhidur Rahman, M. M. Shahidul Hassan and Md. Ziaur Rahman Khan, “Analytical Model for Base Transit Time of a Bipolar Transistor with Gaussian-Doped Base,” 3rd International Conference on Electrical & Computer Engineering ICECE 2004, pp. 478 – 481, Dhaka, Bangladesh, 28-30 December 2004, ISBN: 984-32-1804-4.
  12. M. M. Shahidul Hassan, Md. Ziaur Rahman Khan and Touhidur Rahman, “Analytical Base Transit Time of a Bipolar Transistor Considering Field Dependent Mobility,” 3rd International Conference on Electrical & Computer Engineering, ICECE 2004, pp. 482 – 485, Dhaka, Bangladesh, 28-30 December 2004, ISBN: 984-32-1804-4.
  13. M. Z. Rahman Khan and M.M.S. Hassan and Touhidur Rahman, “New Expression for Base Transit Time in an Exponentially Doped Base Bipolar Transistor for All Levels of Injection,” proceedings of the 15th international conference for Microelectronics (ICM03), Cairo, Egypt, 9-11 December 2003, pp 340-343.
  14. Md. Ziaur Rahman and M. M. S. Hassan, “Analytical Expression of Collector Current Density and Base Transit time in an Exponential Doped Base Bipolar Transistor for all levels of Injection,” ICECE2002, 26-28 December 2002, Bangladesh, pp. 120-123.
  15. M. M. Shahidul Hassan and Ashok Kumar Karmokar, “Diffusion Capacitance of an Epitaxial High Barrier Schottky Diode,” ICECE2002, 26-28 December 2002, Bangladesh, pp. 124-127.
  16. Farseem M. Mohammedy and M. M. S. Hassan, “A Distributed Transmission Line Model for the Base Transit Time of a nonuniformly Doped Bipolar Junction Transistor,” ICECE2002, 26-28 December 2002, Bangladesh, pp. 132-135.
  17. M. A. Abedin and M. M. S. Hassan, “Analytical Base Transit Time Model of a Bipolar Junction Transistor Considering Kirk Effect,” IECE2002, 26-28 December 2002, Bangladesh, pp. 136-129.
  18. M. M. Shahidul Hassan, “ Base Transit Time of a Bipolar Transistor Considering Field Dependent Mobility,” IEB Conference, pp. 102-106, October 23-25, 2002.
  19. M. A. Abedin and M. M. Shahidul Hassan, “Analytical Base Transit Time Model of a Uniformly Doped Base Bipolar Transistors Considering Kirk Effect,” IEB Conference, pp. 65-69, October 22-25, 2002.
  20. M. M. Shahidul Hassan, A. N. Khondker and H. Domingos, “ Conduction Mechanism in BJT’s during Electrical Overstress,” EOS/ESD Symposium Proc., USA, pp. 280-286, 1987.
  21. D. J. Wilson, H. Domingos and M. M. Shahidul Hassan,“Electrical Overstress in NMOS Silicided Devices,” EOS/ESD Symposium Proc., USA, pp. 265-273, 1987.
  22. M. M. Shahidul Hassan, A. N. Khondker and H. Domingos,“Effect of Graded California, USA, EOS/ESD Symposium Proc., pp.70-76, 1988.
  23. M. M. Shahidul Hassan and H. Domingos, “The Double Graded Transistor and Its Beneficial Effect on Resistance to Current Mode Second Breakdown,” EOS/ESD Symposium Proc., USA, pp. 127-135, 1989.

Papers on Education

British Council, Sri Lanka organized a dialogue on ‘Transforming Higher Education in South Asian’ on 18-19 June 2013.

Presented a paper titled ‘Requirement of a National Framework for Overseas Higher Education Delivery Models’, parallel session 4, 18 June 2013, Cinammon Grand Hotel, Colombo 3, Srilanka.

Attended a workshop on  “Regional Accreditation of Engineering Education, Qualifications and Mobility of Engineers in Asia Pacific and Africa”,  27 May 2015, Kula Lumpur, Malaysia. Organizer: Federation of Engineering Institutions of Asia and the Pacific (FEIAP).

Published

Journal

1. M. M. Shahidul Hassan, “Revamping Higher Education in Bangladesh”, International Journal of Management and Applied Science, Vol. 2, Issue 12, Dec 2016.

Conference

  1. M. M. Shahidul Hassan, “National framework for engineering education delivery models in South Asia,” International Conference on Education Scocial Sciences and Humanities (SOCIO-INT15),  Istambul,Turkey, 8-10 July 2015.
  2. M M Shahidul Hassan,,”Challenges and Opportunities for Engineering Education in Bangladesh,” IEOM Symposium on Global Engineering Education, December 19, 2015, Dhaka, Bangladesh..
  3. M. M. Shahidul Hassan, “Outcome Based Engineering Education: A paradigm shift.” ICECE 2012 Conference, Dhaka, Bangladesh.
  4. M M Shahidul Hassan, “ On Challenges of Implementing Outcome Based Engineering Education in Universities in Bangladesh”, pp. 362 – 364, 20-22 Dec. 2012.
  5. M. M. Shahidul Hassan, “Implementing Outcome Based Engineering Education in Bangladesh,” Advanced Education and Management [ICAEM2014], Jan 04 –Jan 06 2014, Beijing, China

Published in the local daily newspapers

  1. M. M. Shahidul Hassan, “How can we build a knowledge-based economy? ,” the Daily Star, Opinion Section, Friday, January 6, 2017.
  2. M. M. Shahidul Hassan, “Global Perspectives on Higher Education in Bangladesh,” The Daily Sun, p-6, Wednesday, 8 June, 2016, http://www.daily-sun.com/printversion/details/142418.
  3. M. M. Shahidul Hassan, “Redesigning Higher Education Curriculum to Meet International Standards,”  The Daily Sun, Thursday, 3 June, 2016.
  1. এম এম শহিদুল হাসান, “আন্তর্জাতিক মানের সঙ্গে সামঞ্জস্যপূর্ণ হতে হবে,” মে ১২, ২০১৬.
  2. M. M. Shahidul Hassan, “Quality Education: Our Goal, Our Commitment,” Association of BUET Alumni News Latter, 1st sissue, Jan. 2016.
  3. M. M. Shahidul Hassan, “Towards harmonisation of higher education in South Asian,” Campis Chronicle, The New Nation, 21 July 2013.
  4. M. M. Shahidul Hassan, “A homogenous system for South Asian higher education”, bdchronicle, The New Nation, 08 Jul, 2013,
  5. M. M. Shahidul Hassan, “Outcome based education: Challenges in implementation,” The Daily Sun, Saturday 12 January 2013.
  6. M. M. Shahidul Hassan, Outcome based Engineering education : A paradigm shift,” The New Nation, Monday, 01 October, 2012.
  7. M M. Shahidul Hassan, “Outcome-based education: Learning’s new paradigm,” The Independent, 07 August 2012.
  8. Professor M M Shahidul Hassan, “ Providing Quality Engineering Education,” Nation, Friday, 12 June 2009.
  9. এম এম শহীদুল হাসান, “ আমেরিকার বিশ্ববিদ্যালয়ে পড়ানোর অভিজ্ঞতা,” নয়া দিগন্ত, ৪ জুলাই  ২০০৯
  10. এম এম শহীদুল হাসান,“ তরুন প্রজন্মের  বড় অংশ প্রকৌশল শিক্ষা নিতে আগ্রহী,” জনকন্ঠ, বাংলাদেশ, ৩০ মার্চ ২০০৯

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