Department of Electrical & Electronic Engineering

Publications

2014

  1. Khairul Alam, Shinichi Takagi, and Mitsuru Takenaka, “A Ge ultrathin-body n-channel tunnel FET: Effects of orientation”, IEEE Transactions on Electron Devices, vol. 61(11), pp. 3594-3600, 2014
  2. Fakir Mashuque Alamgir, Christer Andrews & Jannatul Ferdous Kakon, “A Mat-Lab based Filter for curtailing Interferences in Ad-Hoc Network”, International Journal of Computer Networks and Communications Security, Volume 2, Issue 10, pp 348-354, 2014
  3. Somaia S. Sylvia, K. M. Masum Habib, M. Abul Khayer, Khairul Alam, Mahesh Neupane, and Roger Lake, “Effects of random, discrete source dopant distribution on nanowire tunnel FETs”, IEEE Transactions on Electron Devices, vol. 61(6), pp. 2208-2214, 2014
  4. Niazul Islam Khan, Anna Bergmann, Rainer Michalzik, “Miniaturized VCSEL Modules for Optical Manipulation of Microparticles”, Proceedings of the 8th International Conference on Electrical and Computer Engineering (ICECE), 2014
  5. Niazul Islam Khan, Anwarul Azim, “Radiation Characteristics of a Quarter-Wave Monopole Antenna above Virtual Ground “, Journal of Clean Energy Technologies, Vol. 2, no. 4, pp. 339-342, 2014
  6. Khairul Alam, Shinichi Takagi, and Mitsuru Takenaka, “Strain-modulated L-valley ballistic-transport in (111) GaAs ultrathin-body nMOSFETs”, IEEE Transactions on Electron Devices , vol. 61(5), pp. 1335-1340, 2014

2013

  1. Khairul Alam, Shinichi Takagi, and Mitsuru Takenaka, “Analysis and comparison of L valley transport in GaAs, GaSb, and Ge ultrathin-body ballistic nMOSFETs”, IEEE Transactions on Electron Devices, vol. 60(12), pp. 4213-4218, 2013
  2. Fahima Afroz, Fahmida Repa, Fakir Mashuque Alamgir & Rahul Kumar, “Breakdown of coverage assessment parameters for WCDMA base on UMTS”, International Conference on Emerging Trends & Developments on Science, Management & Technology,Ghaziabad,New Delhi, India., 2013
  3. Lailun Nahar, Sameha Zaman Ruthi, Fakir Mashuque Alamgir & Anwarul Azim, “Decisive Fators of False Detection on Spectrum Sensing in Cognitive Radio”, International Journal of Computer Networks & Communication Security, Volume 1, ISSUE 6,Page:225-231,November, 2013
  4. Somaia Sarwat Sylvia, M. Abul Khayer, Khairul Alam, Hong-Hyun Park, Gerhard Klimeck, and Roger K. Lake, “Discrete Random Distribution of Source Dopants in Nanowire Tunnel Transistors (TFETs)”, APS March Meeting, Baltimore, Maryland, March 18-22 , 2013
  5. Niazul Islam Khan, Anna Bergmann, Rainer Michalzik, “Fabrication of Integration-Capable Surface-Relief VCSEL Arrays for Miniaturized Optical Manipulation of Microparticles”, Proceedings of the International Conference on Advances in Electrical Engineering (ICAEE), 19-21 December, IUB, Dhaka, pp. 395-400, 2013
  6. Somaia Sarwat Sylvia, M. Abul Khayer, Khairul Alam and Roger K. Lake, “On the effect of random source doping distribution in nanowire Tunnel FETs”, TECHCON, September 9-10, Austin, Texas, USA, 2013
  7. Urmita Sikder and Anisul Haque, “Optimization of idealized quantum dot intermediate band solar cells considering spatial variation of generation rates”, IEEE Access, Vol. 1, pp. 363-370, 2013
  8. Khairul Alam, Shinichi Takagi, and Mitsuru Takenaka, “Thickness dependent performance of (111) GaAs UTB nMOSFETs”, 16th International Workshop on Computational Electronics, June 4-7, Nara, Japan, pp. 136-137, 2013

2012

  1. Niazul Islam Khan, A.S.M. Abdul Hye, Md. Rejwanur R. Mojumdar and SK. Shaid-Ur Rahman, “Behavior Analysis of a Gaussian Beam Optical Trap in the Rayleigh Regime”, OPTICS-2012, Proceedings of the International Conference on Data Communication Networking, e-Business and Optical Communication Systems, pp. 365-370, 2012
  2. Somaia Sylvia, M. Abul Khayer, Khairul Alam, and Roger Lake, “Doping, tunnel barrier, and cold carriers in InAs and InSb nanowire tunnel transistors”, IEEE Transactions on Electron Devices, vol. 59(11), pp. 2996-3001, 2012
  3. Kai Sun, M. M. A. Hakim, R. Gunn and P. Ashburn , “Effect of Fluorine on the Lateral Crystallization of Amorphous Silicon Nanowires “, Journal of Solid State Science and Technology, In press, 2012
  4. Khairul Alam and Md. Abu Abdullah, “Effects of gate dielectric constant on the performance of a gate all around InAs nanowire transistor”, IEEE Transactions on Nanotechnology, vol. 11(1), pp. 82-87, 2012
  5. Anna Bergmann, Niazul Islam Khan, Jose Antonio Martos Calahorro, Dietmar Wahl, Rainer Michalzik, “Hybrid Integration Approach of VCSELs for miniaturized optical deflection of microparticles”, SPIE Photonics Europe, Conf. on Semiconductor Lasers and Laser Dynamics V, Volume-8432, pp. 843204-1-12, 2012
  6. Rahul Kumar, Fakir M. Alamgir and Christer Andrews, “Impacts & Minimization of Interrference in Ad Hoc Network”, Journal of Information and Communication Technologies, volume-2-issue-9-october-2012, 2012
  7. Somaia Sylvia, Hong-Hyun Park, M. Abul Khayer, Khairul Alam, Gerhard Klimeck, and Roger Lake, “Material Selection for Minimizing Direct Tunneling in Nanowire Transistors”, IEEE Transactions on Electron Devices, vol. 59(8), pp. 2064-2069, 2012
  8. Somaia Sarwat Sylvia, Mahesh Neupane, M. Abul Khayer, Khairul Alam, and Roger K. Lake, “Material Selection for Nanowire FETs and TFETs”, 8th Annual FENA Review, Los Angeles, CA, Feb 7-8, 2012
  9. Khairul Alam and Roger Lake, “Monolayer MoS2 transistors beyond the technology road map”, IEEE Transactions on Electron Devices , vol. 59(12), pp. 3250-3254, 2012
  10. A. T. M. Golam Sarwar, M. R. Siddiqui, Md. M. Satter, and Anisul Haque, “On the enhancement of the drain current in Indium rich InGaAs surface channel MOSFETs”, IEEE Transactions on Electron Devices, vol. 59, no. 6, pp.1653-1660, 2012
  11. Kai Sun, M. M. A. Hakim & Peter Ashburn, “Rectangular Polysilicon Nanowires by Top-Down Lithography, Dry Etch and Metal-Induced Lateral Crystallization”, Electrochem. Solid-State Lett, Volume 15, Issue 3, pp. H62-H64 , 2012
  12. Mohammad M. A. Hakim, Marta Lombardinia, Kai Sun, Francesco Giustiniano, Peter L. Roach, Donna E. Davies, Peter H. Howarth, Maurits R. R. de Planque, Hywel Morgan, Peter Ashburn, “Thin Film Poly-crystalline Silicon Nanowire Biosensors”, Nano Letters, 12 (4), 1868–1872, 2012
  13. Khairul Alam, “Uniaxial stress modulated electronic properties of a free standing InAs nanowire”, IEEE Transactions on Electron Devices, vol. 59(3), pp. 661-665, 2012

2011

  1. Md. Niazul Islam Khan, Samiul Hayder Chowdhury, Md. Arif Ahmed Roni , “A Comparative Study of the Temperature Dependence of Lasing wavelength of Conventional Edge Emitting Stripe Laser and Vertical Cavity Surface Emitting Laser”, OPTICS-2011, 2011 Proceedings of the International Conference on Optical Communication System, pp. 141-145, 2011
  2. Md. M. Satter, A. E. Islam, D. Varghese, M. A. Alam, and Anisul Haque, “A Self-Consistent Algorithm to Extract Interface Trap States of MOS Devices on Alternative High-Mobility Substrates”, Solid-State Electronics , Vol. 56, No. 1, pp. 141-147, 2011
  3. Samiul Hayder Chowdhury, Niazul Islam Khan, “A Study of the Limitations of Existing Earthquake Disaster Management Systems in Bangladesh and A Novel Semi-centralized Earthquake Disaster Management System Proposition”, International Conference on Environmental Technology & Construction Engineering for Sustainable Development ICETCESD, pp. 1017-1028, 2011
  4. Somaia S Sylvia, M Abul Khayer, Khairul Alam, and Roger K Lake, “Design issue analysis for InAs nanowire tunnel FETs”, Proceedings of SPIE, vol. 8102, p. 81020, 2011
  5. M. Abul Khayer, Somaia Sarwat Sylvia, Khairul Alam, and Roger K. Lake, “Effects of Heavily Doped Source on the Subthreshold Characteristics of Nanowire Tunneling Transistors”, 69th Device Research Conference, June 20-22, Santa Barbara, CA, pp. 51-52, 2011
  6. M. M. A. Hakim, A. Abuelgasim, L. Tan, C. H. de Groot, W. Redman.-White, S. Hall and P. Ashburn, “Improved Drive Current in RF Vertical MOSFETS using Hydrogen Anneal”, IEEE Electron Devices Letters, vol. 32, pp. 279-281, 2011
  7. M. Lombardini, M.M.A. Hakim, K. Sun, G. Broder, F.Giustiniano, M.R.R. de Planque, P.L. Roach, D. E. Davies, H. Morgan and P. Ashburn, “Inflammatory biomarker sensing using rectangular polycrystalline silicon nanowires made by dry etching”, 15th International Conference on Miniaturized Systems for Chemistry and Life Sciences , October 2-6, Seattle, USA, 2011
  8. Kai Sun, Mohammad Al Hakim, Harold Chong and Peter Ashburn, “Materials and Etches for Nanowire Biosensors”, OIPT Process News, 2011
  9. Somaia Sarwat Sylvia, M. Abul Khayer, Khairul Alam, and Roger K. Lake, “Performance Analysis of Nanowire III-V and CNT Tunnel FETs”, 7th Annual FENA Review, Boston, MA, May 9-11, 2011
  10. S. M. Sultan, O. D. Clark, T. B. Masaud, Q. Fang, R. Gunn, M. M. A. Hakim, K. Sun, P. Ashburn and H. M. H. Chong, “Remote plasma atomic layer deposition (ALD) of ZnO for thin film transistor applications”, OIPT Process News, 2011
  11. S. M. Sultan, O. D. Clark, T. B. Masaud, Q. Fang, R. Gunn, M. M. A. Hakim, K. Sun, P. Ashburn, H. M. H. Chong, “Remote plasma atomic layer deposition of ZnO for thin film electronic applications”, 37th International Conference on Micro and Nano Engineering, 19 – 23 September, Germany, 2011

2010

  1. M. A. Karim and Anisul Haque, “A Physically Based, Accurate Model for Quantum Mechanical Correction to the Surface Potential of Nano-Scale MOSFETs”, IEEE Transactions on Electron Devices, Vol. 57, No. 2, pp. 496 – 502, 2010
  2. L. Tan, M. M. A. Hakim, S. Connor, A. Bousquet, C. H. de-Groot, W. Redman.-White, S. Hall and P. Ashburn, “Compact Model Extraction Issues of Nonstandard CMOS Compatible Vertical MOSFETs”, 11th International Conference on ULtimate Integration of Silicon (ULIS), March 17-19, Glasgow, UK, 2010
  3. Shamim Ahmed and Khairul Alam, “Effects of phonon scattering on the performance of silicon nanowire transistors”, 6th International Conference on Electrical and Computer Engineering, December 18-20, Dhaka, Bangladesh, 2010
  4. Sishir Bhowmick and Khairul Alam, “Effects of source-drain underlaps on the performance of silicon nanowire on insulator transistors”, nano-micro letters, vol. 2, pp. 83-88, 2010
  5. Khairul Alam and Redwan N Sajjad, “Electronic properties and orientation-dependent performance of InAs nanowire transistors”, IEEE Transactions on Electron Devices, vol. 57(11), pp. 2880-2885, 2010
  6. M. M. A. Hakim, K. Sun, M. Lombardini , D. E. Davies, P. L. Roach , M. R. R. de Planque , H. Morgan and P. Ashburn, “High Quality Location Controlled Polycrystalline Silicon Nanowires for Bio-sensors”, 3rd International ITP Symposium Program, 26th November, Southampton, UK, 2010
  7. Sun Kai, M. M. A. Hakim, P. Ashburn, “Low Cost Nanowire Biosensor Fabrication “, IDRN, May 14th, Leicester, UK, 2010
  8. Shogo Tanaka and Halima Begum, “Measurement of the Diameters of Deformed Bars in Concrete Using an Electromagnetic Wave Radar (in the Presence of Cross bars)”, SICE Journal of Control, Measurement, and System Integration, vol 3, no 5, pp 330-335, 2010
  9. Md. M. Satter and Anisul Haque, “Modeling Effects of Interface Trap States on the Gate C-V Characteristics of MOS Devices on Alternative High-Mobility Substrates”, Solid-State Electronics, Vol. 54, No. 6, pp. 621-627, 2010
  10. Shogo Tanaka and Halima Begum, “Nondestructive Measurement of Diameter of Reinforcing Bars in Concrete Using an Electromagnetic Wave Radar Under the Effect of Cross Bars”, Proc. of SICE 2010 Annual Conference , pp 2731-2736, 2010
  11. Md. Abdul Wahab and Khairul Alam, “Performance comparison of zero-Schottky-barrier and doped contacts carbon nanotube transistors with strain applied”, Nano-Micro Letters, vol. 2, pp. 126-133, 2010
  12. Md. Abdul Wahab and Khairul Alam, “Performance of zero-Schottky-barrier and doped contact single and double walled carbon nanotube transistors”, Japanese Journal of Applied Physics, vol. 49, pp. 025101(1-6), 2010
  13. Kai Sun, M. M. A. Hakim, J. Kong, M. R. R. de Planque, H. Morgan, P. L. Roach, D. E. Davies, P. Howarth and P. Ashburn, “Polycrystalline Silicon Nanowires Patterned by Top-Down Lithography for Biosensor Applications”, 36th International Conference on Micro & nano Engineering, September 19-22, Genoa, Itlay, 2010
  14. Sun Kai, M. M. A. Hakim, P. Ashburn, “Recrystallised Si Nanofingers and Nanowires for Low Cost “, International Symposium on Atom-scale Si Hybrid Nanotechnologies, March 1-2, Southampton, UK, 2010
  15. M. M. A. Hakim, L. Tan, K. Mallik, S. Connor, A. Bousquet, C. H. de-Groot, W. Redman.-White, S. Hall and P. Ashburn, “Self-Aligned Silicidation of Surround-Gate Vertical MOSFETS for low cost RF applications”, IEEE Transaction on Electron Devices, vol. 57, pp. 3318-3326, 2010
  16. K. Sun, M. M. A. Hakim, M. Lombardini, D. E. Davies, P. L. Roach, M. R. R. de Planque, P. Ashburn and H. Morgan, “Sensors for chemical detection based on top-down fabricated silicon nanowires”, NanoBioTech, November 15-17, Montreaux, Switzerland, 2010

2009

  1. Halima Begum, Masayuki Okamoto and Shogo Tanaka, “A Method of Identifying the Diameter of Deformed Bars Nondestructively in Concrete Structures Using an Electromagnetic Wave Radar”, Proc. of the ICCAS-SICE 2009 (ICROS-SICE International joint conference), pp 3399-3404, 2009
  2. M. M. A. Hakim, L. Tan, K. Mallik, C. H. de-Groot, W. Redman.-White, S. Hall and P. Ashburn, “A Self-Aligned Silicidation Technology for Surround-Gate Vertical MOSFETS”, 39th European Solid-State Device Research Conference (ESSDERC), 14 to 18th September, Athens, Greece, 2009
  3. L. Tan, M. M. A. Hakim, S. Connor, A. Bousquet, W. Redman-White, P. Ashburn and S. Hall, “Characterisation of CMOS Compatible Vertical MOSFETs with New Architectures through EKV Parameter Extraction and RF Measurement”, 10th International Conference on ULtimate Integration of Silicon (ULIS), March 18-20, Aachen, Germany, 2009
  4. Shogo Tanaka and Muhammed Mazharul Islam, “Detection and Identification of an Inclined Crack in Concrete Structures using an Ultrasonic Sensor”, SICE Journal of Control, Measurement, and System Integration, vol. 2, no.2, pp 88/93, 2009
  5. Redwan Noor Sajjad and Khairul Alam, “Electronic properties of a strained <100> silicon nanowire”, Journal of Applied Physics, vol. 105, p. 044307, (2009)., 2009
  6. Sun Kai, Mohammad M. A. Hakim and Peter Ashburn, “Fluorine Dose Effect on the Nickel-induced Lateral Crystallization of Amorphous Silicon”, 39th European Solid-State Device Research Conference (ESSDERC), 14 to 18th September, Athens, Greece, 2009
  7. M. M. A. Hakim, L. Tan, O. Buiu, W. R. -White, S. Hall and P. Ashburn, “Improved sub-threshold slope in short channel vertical MOSFETs using FILOX oxidation”, Solid State electronics, vol. 53, pp. 753-759, 2009
  8. Sun Kai, M. M. A. Hakim, P. Ashburn, “Metal Induced Lateral Crystallization of Amorphous Silicon Nanoribbons for Application in Biosensors”, E-MRS 2009 Spring Meeting, Strasbourg, France, June 8 to 12, 2009
  9. Halima Begum, Masayuki Okamoto and Shogo Tanaka, “Nondestructive Inspection of the Diameter of Reinforcing Bars in Concrete Using an Electromagnetic Wave (Radar)”, SICE Trans. on Industrial Application, vol 8, no 15, pp 117-124, 2009
  10. Redwan Sajjad, Khairul Alam, and Quazi Khosru, “Parametrization of silicon nanowire effective mass model from sp3d5s* orbital basis calculations”, Semiconductor Science and Technology, (in press), 2009
  11. Khairul Alam, “Transport and performance of a gate all around InAs nanowire transistor”, Semiconductor Science and Technology, vol. 24, pp. 085003(1-6), 2009
  12. Khairul Alam, “Transport and performance of a zero-Schottky barrier and doped contacts graphene nanoribbon transistors”, Semiconductor Science and Technology, vol. 24, p. 015007, (2009)., 2009
  13. Khairul Alam, “Uniaxial strain effects on the performance of a ballistic top gate graphene nanoribbon on insulator transistor”, IEEE Transactions on Nanotechnology, (in press), 2009
  14. M. K. Ashraf, A. I. Khan, and Anisul Haque, “Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on (100) and (110) silicon surfaces”, Solid-State Electronics, Vol. 53, No. 3, pp. 271 – 275, 2009
  15. A. I. Khan, M. K. Ashraf, and Anisul Haque, “Wave function penetration effects on ballistic drain current modeling and MOSFET scaling”, Journal of Applied Physics, Vol. 105, No. 6, pp. 064505(1-5), 2009

2008

  1. L. Tan, M. M. A. Hakim, T. Uchino, W. Redman-White, P. Ashburn and S. Hall, “Asymmetrical IV characteristics and junction regions in implantation defined surround gate vertical MOSFETs”, 9th International Conference on Solid State and Integrated Circuit Technology (ICSICT), October 20-23, Beijing, China, 2008
  2. Sharmin R Ara, R. Viswanathan, “Decision combining in relay networks”, 5th International Conference on Electrical and Computer Engineering, December 20-22, 2008, Dhaka, Bangladesh, 2008 , 2008
  3. Sishir Bhowmick and Khairul Alam, “Dielectric scaling of a top gate silicon nanowire on insulator transistor”, Journal of Applied Physics, Volume 104, No(12), Page 124308, 2008
  4. R. N. Sajjad, K. Alam, and Q. D. M. Khosru, “Effects of uniaxial strain on the bandstructures of silicon nanowires”, 5th International Conference on Electrical and Computer Engineering, December 20-22, 2008, Dhaka, Bangladesh, 2008
  5. Khairul Alam, “Gate dielectric scaling of top gate carbon nanoribbon on insulator transistors”, Journal of Applied Physics, Volume 104, No(7), Page 074313, 2008
  6. M. M. A. Hakim, L. Tan, T. Uchino, O. Buiu, W. R. -White, S. Hall and P. Ashburn, “Improved Sub-threshold Slope in RF Vertical MOSFETS using a Frame Gate Architecture”, 38th European Solid-State Device Research Conference (ESSDERC), pp. 95-98, 2008
  7. Halima Begum, Masayuki Okamoto and Shogo Tanaka, “Measuring the Diameter of Reinforcing Bars in Concrete Nondestructively Using Electromagnetic Wave Radar”, Proc. of the SICE Annual Conference 2008 (International Conference on Instrumentation, Control and Information Technology), pp 1951-1956, 2008
  8. Halima Begum, Masayuki Okamoto and Shogo Tanaka, “Nondestructive Inspection of the Diameter of Reinforcing Bars in Concrete”, Proc. of the 40th ISCIE International Symposium on Stochastic Systems Theory and Its Applications, pp 160-165, 2008
  9. M. A. Wahab and K. Alam, “Performance comparison of zero-Schottky-barrier single and double walled carbon nanotube transistors”, 5th International Conference on Electrical and Computer Engineering, December 20-22, 2008, Dhaka, Bangladesh, 2008
  10. D. Plumwongrot, T. Maruyama, Anisul Haque, H. Yagi, K. Miura, Y. Nishimoto and S. Arai, “Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures”, Japanese Journal of Applied Physics, Vol. 47, Part 1, No. 5A, pp. 3735-3741, 2008
  11. L. Tan, S. Hall O. Buiu, M. M. A. Hakim, T. Uchino, W. R. White and P. Ashburn, “Series resistance in vertical MOSFETs with reduced Drain/Source overlap capacitance”, 9th International Conference on Ultimate Integration of Silicon (ULIS), 12-14th March, Udine, Italy, 2008
  12. S. Bhowmick, K. Alam, and Q. D. M. Khosru, “The effects of doping, gate length, and gate dielectric on inverse subthreshold slope and on/off current ratio of a top gate silicon nanowire transistor”, 5th International Conference on Electrical and Computer Engineering, December 20-22, 2008, Dhaka, Bangladesh, 2008

2007

  1. A. M. Sonnet, M. A. Khayer and Anisul Haque, “Analysis of compressively strained GaInAsP/InP quantum wire electro-absorption modulators”, IEEE Journal of Quantum Electronics, Vol. 43, No. 12, pp. 1198-1203, 2007
  2. A. N. M. Zainuddin and Anisul Haque, “An analytical model for electrostatics of strained-Si n-type metal-oxide-semiconductor devices”, Semiconductor Science and Technology, Vol. 22, No. 2, pp. 125-127, 2007
  3. Halima Begum, Masayuki Okamoto, Shogo Tanaka, “A Nondestructive Method for Measuring the Diameter of the Reinforcing Bars in Reinforced Concrete”, Proc. of the 16th Annual Conference of SICE Chugoku Branch, pp 246-247, 2007
  4. Khairul Alam, Nicolas Bruque, and Roger Lake, “Density functional theory mode space approach applied to silicon nanowire FETs”, International Workshop on Computational Electronics, pp. 209-210, October 8-10, Amherst, USA, 2007
  5. Muhammed Mazharul Islam and Shogo Tanaka, “Detection of Multiple Cracks in Concrete Structures Using Ultrasonic Sensor”, Proc. of the 16th Annual Conference of the Society of Instrument and Control Engineers, Chugoku Branch , 2007
  6. Ferdous and Anisul Haque, “Effect of elastic strain redistribution on electronic band structures of compressively strained GaInAsP/InP membrane quantum wires”, Journal of Applied Physics, Vol. 101, No. 9, pp. 093106 (1-5), 2007
  7. D. Shah, N. Bruque, K. Alam, R. Lake and R. R. Pandey, “Electronic properties of carbon nanotubes calculated from density functional theory and the empirical π-bond model “, Journal of Computational Electronics, published online: April 14, 2007
  8. Nicolas Bruque, Rajeev Pandey, Khairul Alam, and Roger Lake, “Electron transport through molecular-carbon nanotube interfaces”, APS March Meeting, vol. 52, March 5–9, Denver, Colorado, 2007
  9. M. M. A. Hakim and P. Ashburn, “Increased lateral crystallization distance during Ni induced lateral crystallization of amorphous silicon using fluorine implantation”, Journal of the Electrochemical Society, vol. 154, pp. H734-H742, 2007
  10. M. M. A. Hakim, “Low temperature seeded crystallization of amorphous silicon for transistor-in-grain technology”, PhD thesis, University of Southampton, 2007
  11. Halima Begum, Masayuki Okamoto and Shogo Tanaka, “Measurement of the Diameter of Deformed Reinforcing Bar in Reinforced Concrete Structure Using an Electromagnetic Wave Radar”, Proc. of the 39th ISCIE International Symposium on Stochastic Systems Theory and Its Applications, pp 26-31, 2007
  12. M. M. A. Hakim and P. Ashburn, “Mechanism of perimeter crystallization around a germanium seed”, Journal of the Electrochemical Society, vol. 154, pp. H275-H282, 2007
  13. Nicolas Bruque, Rajeev Pandey, Khairul Alam, and Roger Lake, “Modeling and Design of Beyond the Roadmap Materials and Devices: Nanowires, Nanotubes, and Molecules”, International Workshop on Electron Devices and Semiconductor Technology, pp. 25-30, Tsinghua University, June 3-4, 2007
  14. M. Itrat B. Shams, K. M. Masum Habib, Q. D. M. Khosru, A. N. M. Zainuddin and Anisul Haque, “On the physically based compact gate C-V model for ultrathin gate dielectric MOS devices using the modified Airy function approximation”, IEEE Transactions on Electron Devices, Vol. 54, No. 9, pp. 2566-2569, 2007
  15. K. Alam and R. Lake, “Performance metrics of a 5 nm, planar, top gate, carbon nanotube on insulator transistor”, IEEE Transactions on Nanotechnology, Volume 6, No (2), Pages 186-190, 2007
  16. K. Alam and R. Lake, “Role of doping in carbon nanotube transistors with source/drain underlaps “, IEEE Transactions on Nanotechnology, Volume 6, No (6), Pages 652-658, 2007
  17. Muhammed Mazharul Islam, Hiroya Yamamoto, Shogo Tanaka, “Simultaneous Detection of Multiple Reflecting planes in concrete using ultrasonic sensors”, Transaction of the Society of Instrument and Control Engineers, vol. 43 No.7 pp 543/551, 2007
  18. S. Hall, L. Tan, 0. Buiu, M.M. Hakim, T. Uchino, P. Ashburn and W. Redman-White, “Vertical MOSFETs for high performance low cost CMOS”, International Semiconductor Conference, CAS, vol. 2, pp. 387 – 396, Oct. 15 -17, 2007

2006

  1. A. E. Islam and Anisul Haque, “Accumulation gate capacitance of MOS devices with ultra-thin high-K gate dielectrics: modeling and characterization”, IEEE Transactions on Electron Devices, Vol. 53, No. 6, pp. 1364-1372, 2006
  2. M. A. Khayer and Anisul Haque, “Analysis of the linewidth enhancement factor (α-factor) in compressively strained InGaAsP quantum wire lasers”, Journal of Applied Physics, Vol. 100, No. 11, pp. 113108(1-6), 2006
  3. H. N. Rutt, and M. M. A. Hakim, “A proposed novel multiplexed near field Terahertz microscope”, Workshop on Terahertz Radiation, 3-6 February, Novosobirsk, 2006
  4. H. N. Rutt, and M. M. Al Hakim, “A proposed novel multiplexed near field Terahertz microscope”, Workshop on New Scientific Possibilities with High Power Terahertz Sources, 29-30 June, Runcorn, UK, 2006
  5. E. Gili, T. Uchino, M. M. A. Hakim, C. H. de Groot, O. Buiu, S. Hall, and P. Ashburn, “Asymmetric Gate Induced Drain Leakage and Body Leakage in Vertical MOSFETs with Reduced Parasitic Capacitance”, IEEE Transaction on Electron Devices, vol. 53 (5), pp. 1080-1087, 2006
  6. R. R. Pandey, N. Bruque, K. Alam, and R. Lake, “Carbon nanotube-molecular resonant tunneling diode”, Physica Status Solidi (a), Volume 203, Page R5, 2006
  7. M. M. A. Hakim, C. H. de Groot, E. Gili, T. Uchino, S. Hall and P. Ashburn, “Depletion isolation effect in Vertical MOSFETS during transition from partial to fully depleted operation”, IEEE Transaction on Electron Devices, vol. 53 (4), pp. 929-933, 2006
  8. Hiroya Yamamoto, Muhammed Mazharul Islam, Shogo Tanaka, “Detection of Multiple concrete cracks using ultrasonic sensor and Multi reflected wave model”, Transaction of the Society of Instrument and Control Engineers, vol. 42 No.6 pp 698/700, 2006
  9. K. Alam and R. Lake, “Dielectric scaling of a zero-Schottky-barrier, 5 nm gate, carbon nanotube transistor with source/drain underlaps”, Journal of Applied Physics, Volume 100, Page 024317, 2006
  10. Rajeev Pandey, Nicolas Bruque, Khairul Alam, and Roger Lake, “Effect of CNT-amide geometry on CNT-molecular conductance”, 232nd ACS National Meeting, September 10-14, San Francisco, California, USA, 2006
  11. F. Ferdous and Anisul Haque, “Elastic strain relaxation in GaInAsP/InP membrane quantum wire lasers”, Semiconductor Science and Technology, Vol. 21, No. 12, pp. 1600-1604, 2006
  12. M. M. A. Hakim, I. Matko, B. Chenevier and P. Ashburn, “Lateral crystallization of amorphous silicon by germanium seeding”, Conference of Materials for Advanced Metallization, Grenoble, France, March 6-8, 2006
  13. M. M. A. Hakim, I. Matko, B. Chenevier and P. Ashburn, “Lateral crystallization of amorphous silicon by germanium seeding”, Microelectronic Engineering, vol. 83, pp. 2437-2440, 2006
  14. Muhammed Mazharul Islam, Hiroya Yamamoto and Shogo Tanaka, “Non-Destructive Inspection of Multiple Concrete Cracks Using Ultrasonic Sensor”, Proc. of the SICE-ICASE International Joint Conference, 2006
  15. M. M. A. Hakim, I. Matko, B. Chenevier and P. Ashburn, “Perimeter crystallization of amorphous silicon around a germanium seed”, Electrochemical and Solid-State Letters, vol. 9, pp. G236-238, 2006
  16. N. Bruque, K. Alam, R. Pandey, R. Lake, X. Wang, F. Liu, C. Ozkan, M. Ozkan, and K. Wang, “Self-assembled carbon nanotubes for electronic circuit and device applications”, Journal of Nano and Optoelectronics, Volume 1, Page 74, 2006
  17. E. Gili, T. Uchino, M. M. A. Hakim, C. H. de Groot, O. Buiu, S. Hall, and P. Ashburn, “Shallow Junctions on Pillar Sidewalls for Sub-100-nm Vertical MOSFETs”, IEEE Electron Device Letters, vol. 27, pp. 692-695, 2006

2005

  1. E. Gili, T. Uchino, M. M. A. Hakim, C. H. De Groot, P. Ashburn and S. Hall, “\”A new approach to the fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket”, Proceedings of 6th International Conference on Ultimate Integration of Silicon (ULIS), pp. 127-130, Bologna, Italy, 2005
  2. Hiroya Yamamoto, Muhammed Mazharul Islam, Shogo Tanaka, “Detection of Multiple Concrete Cracks using Ultrasonic Sensor”, Proc. of the14th Annual Conference of the Society of Instrument and Control Engineers, Chugoku Branch , 2005
  3. Halima Begum, Naoki Sagara and Shogo Tanaka, “Early Warning of Earthquake by Detecting Building Vibration Using Condenser type Microphone”, Proc. of the 14th Annual Conference of SICE Chugoku Branch, pp 66-67, 2005
  4. M. M. A. Hakim, C. H. De Groot, E. Gili, T. Uchino, S. Hall and P. Ashburn, “\”Effect of transition from PD to FD operation on the depletion isolation effect in vertical MOSFETs”, Proceedings of 6th International Conference on Ultimate Integration of Silicon (ULIS), pp. 131-134, Bologna, Italy, 2005
  5. Y. Zheng, C. Rivas, R. Lake, K. Alam, T. B. Boykin, and G. Klimeck, “Electronic properties of silicon nanowires”, IEEE Transactions on Electron Devices, Volume 52, No(6), Pages 1097-1103, 2005
  6. M. M. A. Hakim, P. Ashburn, C. H. De Groot, E. Gili, T. Uchino, and S. Hall, “\”Germanium seeded crystallisation of a-Si for application in 3D integration”, Proceedings of PREP, Lancaster, UK, 2005
  7. K. Alam, R. Lake, and N. Bruque, “High performance carbon nanotube transistors with underlap gates and Coulomb blockade suppressed leakage”, Techcon Conference, October 24-26, 2005, Portland, Oregon, USA, 2005
  8. K. Alam and R. Lake, “Leakage and performance of zero-Schottky-barrier carbon nanotube transistors”, Journal of Applied Physics, Volume 98, Page 064307, 2005
  9. K. Alam and R. Lake, “Near ideal operation of nanometer gate length carbon nanotube FETs”, APS March Meeting, March 21-25, 2005, Los Angeles, California, USA, 2005
  10. K. Alam and R. Lake, “Optimal design and Coulomb blockade suppressed leakage of carbon nanotube transistors”, 63rd Annual Device Research Conference, June 20-23, 2005, Santa Barbara, California, USA, 2005
  11. K. Alam, N. Bruque, R. Pandey, and R. Lake, “Performance, design, and modeling of bio-assembled carbon nanotube FETs”, First International Nanotechnology Conference on Communication and Cooperation, June 2005, San Francisco, California, USA, 2005
  12. K. Alam and R. Lake, “Performance of 2 nm gate length carbon nanotube field-effect transistors with source/drain underlaps”, Applied Physics Letters, Volume 87, Page 073104, 2005
  13. K. Alam and R. Lake, “The effect of source/drain extension asymmetry on the leakage current of ohmicly-contacted carbon nanotube FETs”, NSTI Nanotechnology conference, May 8-12, 2005, Anaheim, California, USA, 2005
  14. A. N. M. Zainuddin and Anisul Haque, “Threshold voltage reduction in strained-Si/SiGe MOS devices due to a difference in the dielectric constants of Si and Ge”, IEEE Transactions on Electron Devices, Vol. 52, No. 12, pp. 2812-2814, 2005

2004

  1. M. M. A. Hakim and A. Haque, “Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics”, Solid-State Electronics, Vol. 48, Issue 7, pp. 1095-1100, 2004
  2. M. M. A. Hakim and Anisul Haque, “Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics”, Solid-State Electronics, Vol. 48, No. 7, pp. 1095-1100, 2004
  3. Anisul Haque, T. Maruyama, H. Yagi, T. Sano, P. Dhanorm and S. Arai, “Anomalous in-plane polarization dependence of optical gain in compressively strained GaInAsP/InP quantum wire lasers”, IEEE Journal of Quantum Electronics, Vol. 40, No. 9, pp. 1344-1351, 2004
  4. Y. Zheng, R. Lake, K. Alam, C. Rivas, T. B. Boykin, and G. Klimeck, “Electronic properties of silicon nanowires”, 10th International Workshop on Computational Electronics, (IEEE Cat. No.04EX915), IEEE, 2004, pp. 82-83, Pisactaway, NJ, USA, 2004
  5. H. Yagi, T. Sano, K. Ohira, P. Dhanorm, T. Maruyama, Anisul Haque, S. Tamura and S. Arai, “GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes”, Japanese Journal of Applied Physics, Vol. 43, No. 6A, pp. 3401-3409, 2004

2003

  1. M. M. A. Hakim and Anisul Haque, “A computationally efficient quantum-mechanical technique to calculate the direct tunneling gate current in metal-oxide-semiconductor structures”, Journal of Applied Physics, Vol. 94, No. 3, pp. 2046-2052, 2003
  2. M. M. A. Hakim and A. Haque, “Computationally efficient quantum-mechanical technique to calculate direct tunnelling gate leakage current in metal-oxide-semiconductor structures”, Journal of Applied Physics, Vol. 94, pp. 2046-2052, 2003
  3. Anisul Haque, H. Yagi, T. Sano, T. Maruyama and S. Arai, “Electronic band structures of GaInAsP/InP vertically stacked multiple quantum-wires with strain-compensating barriers”, Journal of Applied Physics, Vol. 94, No. 3, pp. 2018-2023, 2003
  4. T. Sano, H. Yagi, K. Muranushi, S. Tamura, T. Maruyama, Anisul Haque and S. Arai, “Multiple-quantum-wire structures with good size uniformity fabricated by CH4/H2 dry etching and organometallic vapor-phase-epitaxial regrowth”, Japanese Journal of Applied Physics, Vol. 42, Part 1, No. 6A, pp. 3471-3472, 2003
  5. H. Yagi, T. Sano, K. Ohira, T. Maruyama, Anisul Haque and S. Arai, “Room temperature-continuous wave operation of GaInAsP/InP multiple-quantum-wire lasers by dry etching and regrowth method”, Japanese Journal of Applied Physics, Vol. 42, Part 2, No. 7A, pp. L748-L750, 2003
  6. M. Yunus and Anisul Haque, “Wave function penetration effects on current-voltage characteristics of ballistic metal-oxide-semiconductor transistors”, Journal of Applied Physics, Vol. 93, No. 1, pp. 600-604, 2003

2002

  1. A. Haque and K. Alam, “Accurate modeling of direct tunneling hole current in p-metal-oxide-semiconductor devices”, Applied Physics Letters, Volume 81, Page 667, 2002
  2. Anisul Haque and K. Alam, “Accurate modeling of direct tunneling hole current in p-metal-oxide-semiconductor devices”, Applied Physics Letters, Vol. 81, No. 4, pp. 667-669, 2002
  3. Anisul Haque and M. Z. Kauser, “A comparison of wave function penetration effects on gate capacitance in deep submicron n- and p-MOSFETs”, IEEE Transactions on Electron Devices, Vol. 49, No. 9, pp. 1580-1587, 2002
  4. M. M. A. Hakim and A. Haque, “Capacitance of deep submicron MOSFETS with high-K gate dielectrics”, Second International Conference on Electrical and Computer Engineering (ICECE 2002), Dhaka, Bangladesh, pp. 312-315, 26-28 December, 2002
  5. M. M. Chowdhury, S. Zaman, Anisul Haque and M. R. Khan, “Determination of electron trap distribution in gate-oxide region of deep submicron metal-oxide-semiconductor structure from direct tunneling gate current”, Applied Physics Letters, Vol. 80, No. 12, pp. 2123-2125, 2002
  6. K. Alam, S. Zaman, M. M. Chowdhury, M. R. Khan, and Anisul Haque, “Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistor”, Journal of Applied Physics, Vol. 92, No. 2, pp. 937-943, 2002
  7. M. M. A. Hakim and Anisul Haque, “Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep sub-micron MOSFETs”, IEEE Transactions on Electron Devices, Vol. 49, No. 9, pp. 1669-1671, 2002
  8. M. M. A. Hakim and A. Haque, “Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs”, IEEE Transaction on Electron Devices, vol. 49, pp. 1669-1671, 2002
  9. M. Z. Kauser, M. S. Hasan and Anisul Haque, “Effects of wave function penetration into gate oxide on self-consistent modeling of scaled MOSFETs”, IEEE Transactions on Electron Devices, Vol. 49, No. 4, pp. 693-695, 2002
  10. M. M. A. Hakim, “Modeling of direct tunneling gate current and gate capacitance in deep submicron MOSFETs with high-K dielectric”, Masters thesis, Bangladesh University of Engineering & Technology (B. U. E. T.), 2002
  11. Khairul Alam and Anisul Haque, “Modeling of hole direct tunneling gate current in pMOS devices”, 2nd International Conference on Electrical and Computer Engineering, December 26-28, pp. 76-79, Dhaka, Bangladesh, 2002

2001

  1. M.M. A. Hakim and A.H.M. Zahirul Alam, “A new vertical power MOSFET with extremely reduced on resistance and high switching speed with multilayer structure”, of the First International Conference on Electrical and Computer Engineering (ICECE 2001), pp.163-166, 2001
  2. A. Rahman and Anisul Haque, “A study into the broadening of quantized inversion layer states in deep submicron MOSFETs”, Solid-State Electronics, Vol. 45, No. 5, pp. 755-760, 2001
  3. Anisul Haque and M. R. Quddus, “Room temperature simulation of a novel quantum wire transistor”, Solid-State Electronics, Vol. 45, No. 3, pp. 519-523, 2001

2000

  1. Anisul Haque, A. Rahman and I. B. Chowdhury, “On the use of appropriate boundary conditions to calculate the normalized wavefunctions in the inversion layers of MOSFETs with ultra-thin gate-oxides”, Solid-State Electronics, Vol. 44, No. 10, pp. 1833-1836, 2000
  2. Anisul Haque and A. N. Khondker, “Quantum transport in mesoscopic devices: current conduction in quantum wire structures”, Journal of Applied Physics, Vol. 87, No. 5, pp. 2553-2560, 2000

1999

1998

  1.  Anisul Haque and A. N. Khondker, “An efficient technique to calculate normalized wavefunctions in arbitrary one dimensional quantum well structures”, Journal of Appled Physics, Vol. 84, No. 10, pp. 5802-5804, 1998

1997

  1. A. N. Khondker and Anisul Haque, “Nonequilibrium distribution functions in mesoscopic devices”, Physical Review B, Vol. 55, No. 23, pp. 15798-15803, 1997
  2. A. N. Khondker and Anisul Haque, “Random impurity and phonon scattering processes in mesoscopic devices”, Physical Review B, Vol. 55, No. 7, pp. 4645-4648, 1997

1996

  1. Anisul Haque and A. N. Khondker, “Disorder induced enhancement of the quantum size effects in quantum wires with a tunnel barrier”, Physical Review B, Vol. 54, No. 7, pp. 5016-5019, 1996
  2. Anisul Haque and A. N. Khondker, “On the conductance and the conductivity of disordered quantum wires”, Journal of Applied Physics, Vol. 80, No. 7, pp. 3876-3880, 1996

1995

  1. Anisul Haque and A. N. Khondker, “Electron transport in the presence of random impurities: transition from ballistic to diffusive regimes”, Physical Review B, Vol. 52, No. 15, pp. 11193-11200, 1995

1994

  1. Anisul Haque and A. N. Khondker, “Nonequilibrium transport equation for nonlocal impurity self-energy within the Keldysh formulation”, Physical Review B, Vol. 49, No. 19, pp. 14007-14009, 1994

1990

  1. Anisul Haque, M. Haque and M. R. Khan, “Energy band calculation for periodic potential structures using quantum mechanical impedance”, Journal of Applied Physics, Vol. 68, No. 4, pp. 1661-1664, 1990