MOjammel Al Hakim

Dr. Mohammad Mojammel Al Hakim

Professor

Department of Electrical & Electronic Engineering

East West University, Dhaka, Bangladesh

Email: dmmah@ewubd.edu

I have passion for science & technological innovations and translating them into real world applications. Have always been fascinated by the interactions between industry and university, and this fascination is an important motivation for my research.

Dr. M. M. A. Hakim is a Professor in the Department of Electrical & Electronic Engineering, East West University, Dhaka, Bangladesh. He received his B.Sc and M.Sc degree with distinction from Bangladesh University of Engineering and Technology. He was awarded with prestigious Commonwealth Scholarship from the year 2003 to 2007 and obtained his PhD degree from the University of Southampton, UK on 2007. From 1999-2008 he worked as an Assistant Professor in the Department of Electrical and Electronic Engineering, Dhaka, Bangladesh and from 2007 t0 2012 he worked as a Research Scientist in Southampton Nano-Fabrication Centre, University of Southampton where he was the principal researcher & co-investigator of several UK government (EPSRC, UK) and industry funded (Sharp, OIPT, Aptamar Solutions) highly ambitious projects. He has an extensive research track record in biomedical/health technologies using heterogeneous integration of silicon nanowires & bio-nanotechnology; silicon based nano CMOS devices fabrication & characterisation; engineering of polysilicon materials for thin film transistor technology/3D integration; ZnO based nanodevices for aerospace & defence applications and classical/quantum mechanical simulation of nanodevices. In the past he invented novel methods of low temperature crystallization of amorphous silicon which have a considerable commercial potential for thin film solar cells, mass production of high quality silicon nanowires for bio-sensors & post scaling of CMOS using 3D integration. He also performed extensive research on non-classical vertical MOSFETs for a viable route for improving the RF performance of mature CMOS technologies. His group first time developed a silicidation technology for surround gate vertical MOSFETs which delivered a world record performance for Si based nMOS devices that employed only 0.5µm lithography. Most recently he led an UK Grand Challenge Project for Healthcare to develop silicon nanowire biosensors with cost-effective electronic detection, into a robust user platform for large-scale biomarker diagnostics. Dr. Hakim is currently leading research projects funded by CRT, East West University in collaboration with University of Southampton, UK for research on nanowire sensor design/sensing systems using silicon & novel materials and post silicon based nano-CMOS devices.

  • PhD in Electrical & Electronic Engineering, Nano Research group, Electronics & Computer Science, University of Southampton.
  • M.Sc. in Electrical & Electronic Engineering, Bangladesh University of Engineering & Technology, Dhaka, Bangladesh.
  • B.Sc. in Electrical & Electronic Engineering, Bangladesh University of Engineering & Technology, Dhaka, Bangladesh.
  • HSC in Science Group, Comilla Cadet College, Bangladesh.
  • Professor, Electrical & Electronic Engineering Department, East West University, Dhaka-1212, Bangladesh. , Jan 2012 to date
  • London Technology Network (LTN) Business Fellow working to establish, promote and run activities that would help translating research innovations into application, Jul 2010 to Dec 2011
  • Research Fellow, University of Southampton, Mar 2007 to Dec 2011
  • Assistant Professor, Department of Electrical & Electronic Engineering, Bangladesh University of Engineering & technology, Aug 2002-Apr 2008
  • Lecturer, Department of Electrical & Electronic Engineering, Bangladesh University of Engineering & technology, Nov 1999-Aug 2002
  • Visiting Researcher, Royal Institute of Technology, KTH, Sweden for fabricating MOS devices, Oct to Dec 2008
  • Visiting Researcher, Royal Institute of Technology, KTH, Sweden for fabricating MOS devices, Sep to Dec 2007
  • Research Assistant, Optoelectronics Research Centre (ORC), University of Southampton, Jun to Aug 2006
  • Teaching Assistant, University of Southampton, 2003-2007
Journal
  1. Mohammad M. A. Hakim, Mir T. Rhaman, Kai Sun and Peter Ashburn, “Low cost mass manufacturable nano-sensors in thin film technology for detection of molecules in gas phase,” submiited into Advanced Material Technologies (under revision).
  2. M. A. Hakim, C. H. de Groot, S. Hall and Peter Ashburn, “Drain current multiplication in thin pillar vertical MOSFETS due to depletion isolation and charge coupling,” Accepted for publication into the Journal of Computational Electronics. Current status: In press. DOI: 10.1007/s10825-016-0853-y (impact factor: 1.55)
  3. Kai Sun, M. M. A. Hakim, R. Gunn and P. Ashburn, “Effect of an Oxide Cap Layer and Fluorine implantation on the Metal-induced Lateral Crystallization of Amorphous Silicon,” ECS Journal of Solid State Science & Technology, vol.2, pp. P42-P45, 2013. (Impact factor: 1.588)
  4. Kai Sun, M. M. A. Hakim, R. Gunn and P. Ashburn, “Effect of an Oxide Cap Layer and Fluorine implantation on the Metal-induced Lateral Crystallization of Amorphous Silicon,”Oxford Instrument Plasma Technology Process News, vol. 1, p. 11, 2013.
  1. Mohammad M. A. Hakim, Marta Lombardini, Kai Sun, Francesco Giustiniano, Peter L. Roach, Donna E. Davies, Peter H. Howarth, Maurits R. R. de Planque, Hywel Morgan, Peter Ashburn, “Thin Film Poly-crystalline Silicon Nanowire Biosensors,” Nano Letters, vol. 12, pp. 1868-1872, 2012. (Impact factor: 13.592)
  2. Kai Sun, M. M. A. Hakim, R. Gunn and P. Ashburn, “Effect of fluorine on the lateral crystallization of amorphous silicon nanowires,” ECS Journal of Solid State Science & Technology, vol. 1, pp. P94-P99, 2012. (Impact factor: 1.588)
  3. Kai Sun, M. M. A. Hakim and Peter Ashburn, “Rectangular polysilicon nanowires by top down lithography, dry etch and metal induced lateral crystallization,” Electrochemical and Solid-State Letters, vol. 15, pp. H62-H64, 2012. (Impact factor: 2.15)
  4. M. Sultan, O.D. Clark, T.B. Masaud, Q. Fang, R. Gunn, M.M.A. Hakim, K. Sun, P. Ashburn and H.M.H. Chong, “ Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications,” Microelectronic Engineering, vol. 97, pp. 162-165, 2012. (Impact factor: 1.197)
  5. M. A. Hakim, A. Abuelgasim, L. Tan, C. H. de Groot, W. Redman.-White, S. Hall and P. Ashburn, “Improved Drive Current in RF Vertical MOSFETS using Hydrogen Anneal,” IEEE Electron Devices Letters, vol. 32, pp. 279-281, 2011. (Impact factor: 2.754)
  6. Kai Sun, Mohammad Al Hakim, Harold Chong and Peter Ashburn, “Material and etches for nanowire biosensors,” Oxford Instrument Plasma Technology Process News, vol. 2, pp. 8-9, 2011.
  7. M. Sultan, O. D. Clark, T. B. Masud, Q. Fang, R. Gunn, M. M. A. Hakim, K. Sun, P. Ashburn and H. Chong, “Remote plasma atomic layer deposition (ALD) of ZnO for thin film transistor applications, Oxford Instrument Plasma Technology Process News, vol. 2, pp. 12-13, 2011.
  8. M. A. Hakim, L. Tan, K. Mallik, S. Connor, A. Bousquet, C. H. de-Groot, W. Redman.-White, S. Hall and P. Ashburn, “Self-Aligned Silicidation of Surround-Gate Vertical MOSFETS for low cost RF applications,” IEEE Transaction on Electron Devices, vol. 57, pp. 3318-3326, 2010. (Impact factor: 2.36)
  9. M. A. Hakim, L. Tan, O. Buiu, W. R. -White, S. Hall and P. Ashburn, “Improved sub-threshold slope in short channel vertical MOSFETs using FILOX oxidation,” Solid State electronics, vol. 53, pp. 753-759, 2009. (Impact factor: 1.504)
  10. Gili, V. D. Kunz, T. Uchino, M. M. A. Hakim, C. H. de Groot, P. Ashburn and S. Hall, “Asymmetric Gate Induced Drain Leakage and Body Leakage in Vertical MOSFETs with Reduced Parasitic Capacitance,” IEEE Transaction on Electron Devices, vol. 53 (5), pp. 1080-1087, 2006. (Impact factor: 2.36)
  11. Gili, T. Uchino, M. M. A. Hakim, C. H. de Groot, O. Buiu, S. Hall, and P. Ashburn, “Shallow Junctions on Pillar Sidewalls for Sub-100-nm Vertical MOSFETs,” IEEE Electron Device Letters, vol. 27, pp. 692-695, 2006. (Impact factor: 2.754)
  12. M. A. Hakim and P. Ashburn, “Increased lateral crystallization distance during Ni induced lateral crystallization of amorphous silicon using fluorine implantation,” Journal of the Electrochemical Society, vol. 154, pp. H734-H742, 2007. (Impact factor: 3.266)
  13. M. A. Hakim and P. Ashburn, “Mechanism of perimeter crystallization around a germanium seed,” Journal of the Electrochemical Society vol. 154, pp. H275-H282, 2007. (Impact factor: 3.266)
  14. M. A. Hakim, I. Matko, B. Chenevier and P. Ashburn, “Perimeter crystallization of amorphous silicon around a germanium seed,” Electrochemical and Solid-State Letters, vol. 9, pp. G236-238, 2006. (Impact factor: 2.15)
  15. M. A. Hakim, I. Matko, B. Chenevier and P. Ashburn, “Lateral crystallization of amorphous silicon by germanium seeding,” Microelectronic Engineering, vol. 83, pp. 2437-2440, 2006. (Impact factor: 1.197)
  16. M. A. Hakim, C. H. de Groot, E. Gili, T. Uchino, S. Hall and P. Ashburn, “Depletion isolation effect in Vertical MOSFETS during transition from partial to fully depleted operation,” IEEE Transaction on Electron Devices, vol. 53 (4), pp. 929-933, 2006. (Impact factor: 2.36)
  17. M. A. Hakim and A. Haque, “Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics,” Solid-State Electronics, Vol. 48, Issue 7, pp. 1095-1100, 2004. (Impact factor: 1.504)
  18. M. A. Hakim and A. Haque, “Computationally efficient quantum-mechanical technique to calculate direct tunnelling gate leakage current in metal-oxide-semiconductor structures,” Journal of Applied Physics, Vol. 94, pp. 2046-2052, 2003. (Impact factor: 2.19).
  19. M. A. Hakim and A. Haque, “Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs,” IEEE Transaction on Electron Devices, vol. 49, pp. 1669-1671, 2002. (Impact factor: 2.36)
Conference

Invited conference

  1. Mohammad M. A. Hakim, “Thin Film Poly-crystalline Silicon Nanowires: A route towards low cost mass manufacturable nano-sensors with the capability of detecting analytes both in aqueous solution and in gas phase,” in the International Conference on Advanced Nanomaterial and Nanotechnology (ICANN 2017) to be held on December 18-21, Guwahati, India.
  2. M. A. Hakim, M. Lombardini, Kai Sun, M. R. R. de Planque, H. Morgan and P. Ashburn, “High Quality Location Controlled Poly-crystalline Silicon Nanowires For Biosensors and Cytokine Binding Kinetics,” in the 2ndAnnual World Congress of Smart Materials-2016 (WCSM-2016), March 4-6, Singapore, 2016.
  3. M. A. Hakim, K. Sun, M. Lombardini , D. E. Davies, P. L. Roach , M. R. R. de Planque , H. Morgan and P. Ashburn, “High Quality Location Controlled Polycrystalline Silicon Nanowires for Bio-sensors,” in the 3rd International ITP Symposium Program,26th November, Southampton, UK, 2010.

Regular conference

  1. Anamika Shargen, Salim Sazzad, Mehedi Hasan and M. M. A. Hakim, ” Feasibility of silicon nanowire’s electrical characteristics modulation using substrate bias for tunable biosensor design,” accepted in the IEEERegion 10 Humanitarian Technology Confererence 2017 to be held on Dec 21-23, Dhaka, Bangladesh.
  2. Tanvir Alam Shifat, Rubiya Nila, Muktadir Imam Jan and M. M. A. Hakim, “Bias dependent non-linear electrical characteristics of poly-silicon nanowire and assessment of biosensing application using liquid gate,” in 9th International Conference on Electrical and Computer Engineering 20-22 December, Dhaka, Bangladesh, 2016.
  3. Laila Parvin Poly, Md. Asrarul Haque and M. M. A. Hakim, “An investigation of the effects of doping and thickness on the electrical characteristics of polycrystalline silicon nanowire biosensors,” in 9th International Conference on Electrical and Computer Engineering 20-22 December, Dhaka, Bangladesh, 2016.
  4. Asrarul Haque, Kaisaruddin, Rouzatan Rafiue and M. M. A. Hakim, “Electrical characteristics tuning of silicon nanowires through backgate bias arrangement and feasibility of its application as biosensors,” in 11th Gobal Engineering, Science and Technology Conference, 18-19 December, Dhaka, Bangladesh, 2015.
  5. H. Rubel, Kai Sun, S. Hall, P. Ashburn and M. M. A. Hakim, “Effect of Lightly Doped Drain on the Electrical Characteristics of CMOS Compatible Vertical MOSFETs,” in the 3rd international conference on advances in electrical engineering (ICAEE-2015), 17-19 December, 2015, Dhaka, Bangladesh.
  6. Kai Sun, M. M. A. Hakim, I. Zeimpekis-Karakonstantinos, R. Gunn and P. Ashburn, “Comparison of Etches for Top-down Fabrication of Polycrystalline Silicon Nanowires,” in the 38th international conference on Micro and Nano Engineering, 16-20 September, Toulouse, France, 2012.
  7. M. A. Hakim, L. Tan, A. Abuelgasim, C. H. de-Groot, W. Redman.-White, S. Hall and P. Ashburn, “Drive Current Improvement in Vertical MOSFETS using Hydrogen Anneal,” in the 7th International Conference on Electrical and Computer Engineering (ICECE 2012), Dhaka, Bangladesh, December 20-22, 2012.
  8. Lombardini, M.M.A. Hakim, K. Sun, G. Broder, F.Giustiniano, M.R.R. de Planque, P.L. Roach, D. E. Davies, H. Morgan and P. Ashburn, “Inflammatory biomarker sensing using rectangular polycrystalline silicon nanowires made by dry etching,” in the 15th International Conference on Miniaturized Systems for Chemistry and Life Sciences, October 2-6, 2011, Seattle, USA.
  9. Sun, M. M. A. Hakim, M. Lombardini, F. Giustiniano, D. E. Davies, P. L. Roach, M. R. R. de Planque, P. Ashburn and H. Morgan, “Low-cost polysilicon nanowires for chemical sensing based on top down photolithography and dry etch,” in the annual S2K conference on Innovative Manufacturing Process in Micro and Nano Electronics, 21-22 June, 2011, Surrey, UK.
  10. M. Sultan, O. D. Clark, T. B. Masaud, Q. Fang, R. Gunn, M. M. A. Hakim, K. Sun, P. Ashburn, H. M. H. Chong, “Remote plasma atomic layer deposition of ZnO for thin film electronic applications,” 37th International Conference on Micro and Nano Engineering, 19 – 23 September, Germany, 2011.
  11. Kai Sun, M. M. A. Hakim, J. Kong, M. R. R. de Planque, H. Morgan, P. L. Roach, D. E. Davies, P. Howarth and P. Ashburn, “Polycrystalline Silicon Nanowires Patterned by Top-Down Lithography for Biosensor Applications,” in the 36th International Conference on Micro & nano Engineering, September 19-22, Genoa, Itlay, 2010.
  12. Sun Kai, M. M. A. Hakim, P. Ashburn, “Recrystallised Si Nanofingers and Nanowires for Low CostBiosensor Applications,” in the International Symposium on Atom-scale Si Hybrid Nanotechnologies, March 1st – March 2nd, Southampton, 2010.
  13. Sun Kai, M. M. A. Hakim, J. Kong, M R R de Planque, H. Morgan, P. L. Roach, D. E. Davis, P. Howarth and P. Ashburn, “Low Cost Nanowire Biosensor Fabrication using Thin Film Amorphous Silicon Crystallisation Technologies,” In IDRN, May 14th, Leicester, UK, 2010.
  14. Sun, M. M. A. Hakim, M. Lombardini, D. E. Davies, P. L. Roach, M. R. R. de Planque, P. Ashburn and H. Morgan, “Sensors for chemical detection based on top-down fabricated silicon nanowires,” in NanoBioTech, November 15-17, Montreaux, Switzerland, 2010.
  15. Tan, M. M. A. Hakim, S. Connor, A. Bousquet, C. H. de-Groot, W. Redman.-White, S. Hall and P. Ashburn, “Compact Model Extraction Issues of Nonstandard CMOS Compatible Vertical MOSFETs,” in the 11th International Conference on ULtimate Integration of Silicon (ULIS), March 17-19, Glasgow, UK, 2010.
  16. Sun Kai, M. M. A. Hakim, P. Ashburn, “Metal Induced Lateral Crystallization of Amorphous Silicon Nanoribbons for Application in Biosensors,” E-MRS 2009 Spring Meeting, Strasbourg, France, June 8 to 12, 2009.
  17. M. A. Hakim, L. Tan, K. Mallik, C. H. de-Groot, W. Redman.-White, S. Hall and P. Ashburn, “A Self-Aligned Silicidation Technology for Surround-Gate Vertical MOSFETS,” in the 39th European Solid-State Device Research Conference (ESSDERC), 14 to 18th September, Athens, Greece, 2009.
  18. Tan, M. M. A. Hakim, S. Connor, A. Bousquet, W. Redman-White, P. Ashburn and S. Hall, “Characterisation of CMOS Compatible Vertical MOSFETs with New Architectures through EKV Parameter Extraction and RF Measurement,” in the 10th International Conference on ULtimate Integration of Silicon (ULIS), March 18-20, Aachen, Germany, 2009.
  19. Sun Kai, Mohammad M. A. Hakim and Peter Ashburn, “Fluorine Dose Effect on the Nickel-induced Lateral Crystallization of Amorphous Silicon,” in the 39th European Solid-State Device Research Conference (ESSDERC), 14 to 18th September, Athens, Greece, 2009.
  20. M. A. Hakim, L. Tan, T. Uchino, O. Buiu, W. R. -White, S. Hall and P. Ashburn, “Improved Sub-threshold Slope in RF Vertical MOSFETS using a Frame Gate Architecture,” in the 38th European Solid-State Device Research Conference (ESSDERC), pp. 95-98, 2008.
  21. Tan, S. Hall O. Buiu, M. M. A. Hakim, T. Uchino, W. R. White and P. Ashburn, “Series resistance in vertical MOSFETs with reduced Drain/Source overlap capacitance,” In the 9th International Conference on Ultimate Integration of Silicon (ULIS), 12-14th March, Udine, Italy, 2008.
  22. Tan, M. M. A. Hakim, T. Uchino, W. Redman-White, P. Ashburn and S. Hall, “Asymmetrical IV characteristics and junction regions in implantation defined surround gate vertical MOSFETs,” in the 9th International Conference on Solid mState and Integrated Circuit Technology (ICSICT), October 20-23, Beijing, China, 2008.
  23. Hall, L. Tan, 0. Buiu, M.M. Hakim, T. Uchino, P. Ashburn and W. Redman-White, “Vertical MOSFETs for high performance low cost CMOS,” International Semiconductor Conference, CAS, vol. 2, pp. 387 – 396, Oct. 15 -17, 2007.
  24. M. A. Hakim, I. Matko, B. Chenevier and P. Ashburn, “Lateral crystallization of amorphous silicon by germanium seeding,” In the Conference of Materials for Advanced Metallization, Grenoble, France, March 6-8, 2006.
  25. N. Rutt, and M. M. Al Hakim, “A proposed novel multiplexed near field Terahertz microscope,” in Workshop on New Scientific Possibilities with High Power Terahertz Sources, 29-30 June, Runcorn, UK, 2006.
  26. N. Rutt, and M. M. A. Hakim, “A proposed novel multiplexed near field Terahertz microscope,” in Workshop on Terahertz Radiation, 3-6 February, Novosobirsk, 2006.
  27. Gili, T. Uchino, M. M. A. Hakim, C. H. De Groot, P. Ashburn and S. Hall, “A new approach to the fabrication of CMOS compatible vertical MOSFETs incorporating a dielectric pocket,” in Proceedings of 6th International Conference on Ultimate Integration of Silicon (ULIS), pp. 127-130, Bologna, Italy, 2005.
  28. M. A. Hakim, P. Ashburn, C. H. De Groot, E. Gili, T. Uchino, and S. Hall, “Germanium seeded crystallisation of a-Si for application in 3D integration,” in Proceedings of PREP, Lancaster (UK), 2005.
  29. M. A. Hakim, C. H. De Groot, E. Gili, T. Uchino, S. Hall and P. Ashburn, “Effect of transition from PD to FD operation on the depletion isolation effect in vertical MOSFETs,” in Proceedings of 6th International Conference on Ultimate Integration of Silicon (ULIS), pp. 131-134, Bologna, Italy, 2005.
  30. M. A. Hakim and A. Haque, “Gate Capacitance of deep submicron MOSFETS with high-K gate dielectrics,” in the Proceedings of the Second International Conference on Electrical and Computer Engineering (ICECE 2002), Dhaka, Bangladesh, pp. 312-315, 26-28 December, 2002.
  31. M. A. Hakim and A.H.M. Zahirul Alam, “A new vertical power MOSFET with extremely reduced on resistance and high switching speed with multilayer structure,” in the Proceedings of the First International Conference on Electrical and Computer Engineering (ICECE 2001), pp.163-166, 2001.

Thesis/Books

  1. M. A. Hakim, “Modeling of direct tunneling gate current and gate capacitance in deep submicron MOSFETs with high-K dielectric”, Masters thesis, Bangladesh University of Engineering & Technology (B. U. E. T.), 2002.
  2. M. A. Hakim, “Low temperature seeded crystallization of amorphous silicon for transistor-in-grain technology,” PhD thesis, University of Southampton, 2007.

Research interests:

  • Sensors & systems for personalized, preventive & proactive healthcare
  • Micro and nanofluidic systems with applications in medical and environmental sciences.
  • Micro & nanofabrication
  • Silicon based nanoelectronics: Advanced silicon front end processes & devices
  • Biomedical engineering and/or healthcare technologies
  • Engineering of functional nano-materials
  • Heterogeneous integration of silicon
  • ZnO based nanodevices for healthcare, environmental control, aerospace & defence applications
  • Classical/quantum mechanical simulation of nanodevices.

Research Grants Received and/or assisted:

  • EPSRC, Feasibility of Novel Deca-Nanometer Vertical MOSFETs for Low-cost Radio Frequency Circuit Application Reference: EP/E012329/1, Value: £648,248, Role: Researcher, Funded.
  • EPSRC, Silicon Nanowire Arrays for Viral Infection Markers (SINAVIM), Reference: EP/G061696/1, Value: £1,107,763, Role: Researcher co-investigator,
  • TSB, Low cost Nanowire Diagnostic Platform, Value: £768, 421, actively participated on background results for proposal preparation. Funded.
  • OIPT, Nanowires of Novel Materials Using Deposition & Etch: Value: £360, 000. Co-investigator,
  • HEQEP sub-project knowledge transfer and capacity development of academic staff, Silicon nanowire biosensors for healthcare and environmental control, Value: 5,80,000 BDT. Principal investigator, This project is in collaboration with Southampton Nanofabrication Center, UK.

Research track record

  1. Reaserch projects:

In Progess:

  • Silicon nanowire biosensors for healthcare and environmental control: My current research is funded by CRT, EWU. The overall aim of this project is to perform a detail investigation of different types of silicon nanowire (SiNW) biosensors with the target to solve one of the key outstanding issues which is the determination of the required thickness, length, surface states and appropriate bias voltages of different types of nanowires for single moleculer level detection. Single crystal and polycrystalline silicon nanowires will be realized and the complicated relationship of nanowires’ electrical behavior with parameters like nanowire length, thickness, doping, bias polarity, interface states will be investigated using the industry standard Technology Computer Aided Design tool Silvaco. This project builds up a unique platform of international collaboration between CRT, EWU and Southampton Nanofabrication Center, UK which is known as one of the topmost nanofabrication facilities in Europe. The project will have unique access to experimental samples from Southampton Nanofabrication Center, University of Southampton, UK allowing calibration, physical explanation thereby would provide the necessary insight into the required parameters for the desired electrical characteristics, process condition for realizing nanowires of appropriate materials and applicable bias conditions so that nanowire biosensor designs are optimized.

Completed:

  • Silicon nanowire arrays for viral infection markers: My most recent research project is an UK Grand Challenge Project for Healthcare engineering using heterogeneous integration of silicon nanowires & bio-nanotechnology which was honoured with £1.3 Million by Engineering & Physical Sciences Research Council (EPSRC), UK. This is a multidisciplinary research project in which I was a Researcher Co-investigator, Peter Ashburn as Principal Investigator and co-investigators were from the School of Medicine, Chemistry, Sociology and Electronics of the University of Southampton. The aim of this research is to develop silicon nanowire biosensors with cost-effective electronic detection, into a robust user platform for large-scale biomarker diagnostics for a personalized, proactive and preventative healthcare. I have successfully developed a generic top-down fabrication approach for polysilicon nanowire fabricatio. The polysilicon is deposited by PECVD and a special anisotropic dry etch process is used to create rectangular nanowires. The whole process does not require any expensive lithography which just uses mature microelectronics (linewidths of >3mm) and thin film technology, offering a very low cost technology. A successful integration of functional biological molecules is achieved on these nanowires and the quantification of the immobilized biological complexes is done upon application of electric field which demonstrated a commercial route for nanowire biosensor fabrication. This has created an exciting opportunity for research on low cost diagnostic platform through a second phase of grant from TSB, UK. I have actively participated on this follow up proposal preparation.
  • Nanowires using novel materials for smart biosensors, aerospace and defence companies and photonic applications: I have also participated on a collaborative research on realising nanowires using novel materials with Prof. Peter Ashburn and Dr. Chong in Southampton which has been awarded with £360, 000 from Oxford Instrument Plasma Technology (OIPT). As a starting, remote plasma atomic layer deposition (ALD) was used to successfully grow ZnO layer with a resistivity of 1 kΩ.cm and an estimated carrier concentration of ~ 6×1019cm-3. We have extensively studied the stoichiometry of our grown ZnO layer and the quality of the layer was assessed by fabrication of staggered bottom gate thin film transistors (TFT). Recently we have successfully fabricated rectangular ZnO nanowires using my generic generic top-down fabrication approach of deposition and etch in mature microelectronics (linewidths of >3mm). Currently we are investigating the ZnO nanowires developed by the aforementioned technology and a follow up proposal is also prepared which aims to realize stable p-type ZnO layer and junction less ZnO nanowire transistors. This research has several promises for exploitation. On one side ZnO nanowires are attractive for realising smart gas sensors for healthcare & environmental control, on the other hand this research will lead to a paradigm shift in wide bandgap semiconductor devices and lead to new fields of research into zinc oxide pn diodes, photonic devices, MOSFETs, MESFETs, bipolar transistors and power devices with obvious applications in aerospace/defence companies and display companies for transparent electronics.
  • Silicon based nano CMOS devices: I also worked on a Engineering & Physical Sciences (EPSRC), UK funded research project (£648,248) aimed at investigating non-classical vertical MOSFETs for a viable route for improving the RF performance of mature CMOS technologies which exploits the lithography independent short channel definition technique of vertical MOSFETs. Several innovations came out of this research solving the problems of overlap capacitance, short channel effects and source/drain series resistances in these devices. We are the first group to realize a silicidation technology for surround gate vertical MOSFETs which was successfully integrated with a Fillet Local Oxidation (FILOX) process. In this way, a world record fT of 20 GHz was achieved for Si based nMOS devices for 0.5µm lithography offering a low cost route for improving the RF performance of mature lateral CMOS These inventions have attracted attention of several semiconductor industries.
  • Engineering of smart nano-materials: My PhD research was a project of SINANO which aimed to strengthen European scientific and technological excellence in the field of Si-based nanodevices. This research focused on thin layer of amorphous silicon deposition and engineering its morphology by crystallization for transistor-in-grain technology and/or large area electronics. Two novel methods of low temperature crystallization of amorphous silicon were developed during this research. One method used fluorine during metal induced lateral crystallization (MILC) of amorphous silicon which delivered dramatically increased lateral crystallization distance (65%) and a high quality silicon layer. I also identified a new amorphous silicon crystallization phenomenon which originated from the perimeter of the germanium layer during low temperature anneal and excellent grain localization was achieved without any metal contamination. The developed methods of devising poly-silicon have a considerable commercial potential for some other applications like thin film solar cells, mass production of high quality silicon nanowires for bio-sensors & obviously for post scaling of CMOS using 3D integration.
  • Simulation & compact model development: I also got an extensive experience of process/device simulation using SILVACO & SYNOPSIS TCAD tools and Matlab, C++ environment through several simulations which I undertook in the past. Simulation of vertical MOSFETs to study the device behaviour during transition from partial to fully depleted operation in vertical MOSFETs and simulation of PIN diode for a proposed novel multiplexed near field Terahertz microscope were carried out. A theoretical study on the quantum phenomena in deep sub micron MOSFETs with high-K dielectrics was also done. This Quantum mechanical modelling of MOS devices with high-K dielectrics was one of the earliest theoretical investigations of this type of structures.

Key research achievements

  • Demonstrated a wafer scale nanowire biosensor platform using mature microelectronics (linewidths of >3mm) and thin film technology, offering the prospect of manufacturability in a very low cost technology which attracted attention of industries like Sharp, Aptamer Solutions, Applied Nanodetecto and BAE Systems, UK. The technology was presented as Innovative Engineering Solutions for Healthcare in a BBC, UK interview in the year of 2011 [4].
  • Invention of two novel methods of low temperature crystallization of amorphous silicon for transistor-in-grain technology and/or large area electronics.
  • Silicidation for surround gate vertical MOSFETs with integration of Fillet Local Oxidation (FILOX) process which delivered a world record fT of 20 GHz for Si based nMOS devices that employed only 0.5µm lithography.
  • Developed a generic technique of nanowire definition [4, 6] using Oxford Instruments equipments which created collaborative research with OIPT and the University of Southampton was honoured with a £360,000 contract from OIPT for nanowire growth in some other technologically important materials for smart nanosensor and advanced electronic/photonic realization.

Expertise

A. Simulation:

  • 2D/3D process and device simulations: In particular semiconductor devices like Nanowire bio-sensors, planar and vertical MOSFETs, TFTs, nanowire transistors, etc using Silvaco & SYNOPSIS TCAD tools.
  • 2D/3D electromechanical static & dynamic simulation system by using ANSYS-ISE and Conventorware-COMSOL platforms.
  • Atomistic simulation of charge-transfer phenomena between chemical species & biomolecules and Si surfaces using ab-initio packages SIESTA and Virtual Nano Lab.
  • Chip layout/mask design and design verification of VLSI devices using SILVACO & SYNOPSIS TCAD tools, Cadence, L-EDIT and Microwind tools.
  • VLSI circuit performance evaluation using Pspice/Orcad tools and mixed mode simulation platform of SILVACO TCAD tools.
  • Modelling quantum transport in mesoscopic structures: Developed a coupled Schrodinger and Poisson solver which is capable of simulating transport phenomena in nanodevices like deep sub-micron and nanowire MOSFETs.

B. Nanofabrication:

Around nine years of in hand micro & nano fabrication experience in the nanofabrication facility of the University of Southampton and Electrum Laboratory, KTH, Sweden. In particular, processing and process development experience in:

  • Dry etching experience with Applied Materials Precision 5000 Mark II, Oxford RIE 80+ and Plasmalab ICP etcers. CHF3, CF4 and Ar/O2 based anisotropic oxide and nitride etch; HBr, Cl2 and SF6, O2, C4F8 based anisotropic PolySilicon and Silicon etch; BCl3, Cl2, SF6, N2 based anisotropic Al/TiW metal etch etc.
  • Experience in operating Bruce/Tempress LPCVD and diffusion furnaces for nitride, LTO, TEOS, amorphous/polysilicon layer deposition, oxidation and annealing.
  • Extensive experience in photo resist coating, exposition using XLS 7500/2145 i-line stepper, EVG 620 manual and automatic aligners and developing.
  • Rapid thermal processing using Mattson 100 RTP Systems.
  • Metal evaporation using Provac PAK 600/700 Coating System and sputtering using Magnetron ET sputter.
  • Various wet processing (isotropic/anisotropic wet etch of nitride, oxide and silicon, surface cleaning and different wet etch techniques to characterise the grain growth in amorphous silicon) & lift off using SSE tool.

C. Characterisation:

DC and RF characterisation of VLSI devices, in particular planar and vertical MOSFETs; acquired at the Southampton Nano Fabrication Centre, University of Southampton, UK.

  • Operation of manual Microtech prober/semiautomatic Summit 12000B-AP probe station for transistor and chip measurements.
  • Operation of Agilent 4155C Semiconductor Parameter Analyser, Agilent 4279A 1MHz CV meter, Agilent B1500A semiconductor device analyzers and Agilent 8361A microwave vector network analyzer.

Structural characterisation of semiconductor materials:

  • Extensive experience in SEM (Scanning Electron Microscope) microscopy and sample preparation; performed at the Electron Microscopy Centre of the University of Southampton; instruments used: JSM 6500F/7500F thermal field emission scanning electron microscope and Hitachi FEG-SEM.
  • Surface analysis with SIMS (Secondary Ion Mass Spectrometry), performed at LSA (Loughborough Surface Analysis Ltd.)
  • Silicon surface profiling using Alphastep 200 Automatic Step Profiler and LOT KLA-Tencor alpha-step IQ stylus surface profiler.
  • Thin layers thickness measurements using LOT Woollham M2000D ellipsometer.
  • X-ray diffraction, performed at the Department of Chemistry, University of Southampton, Southampton, UK.
  • Raman Spectroscopy using Renishaw in Via Reflex Spectrometer system.
  • Atomic force microscopy (AFM) using Veeco Multimode Nanoscope V Scanning Probe Microscope and Veeco Caliber Scanning Probe Microscope.
  • Surface characterization by Nomarski Differential Interference Contrast (DIC) Imaging.

General computing skills:

  • Layout editor: L-Edit.
  • Programming in MATLAB/C++ environment.
  • Microsoft Office software (Word, Access, PowerPoint, Excel, Visio).
  • LaTeX (Text Processing tool).
  • Operating Systems: Windows up to XP version, Linux and Solaris
  • CorelDRAW (illustration and page layout).
  • Corel PHOTO-PAINT (digital imaging).
  • Microcal Origin (Graphics software package).
Course Outline

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Course Material

Teaching Interests:

  • Nanotechnology/Bionanotechnology
  • Biosensors
  • Lab on a Chip
  • Medical Electronics & Electrical Technology
  • Nanofabrication and characterisation
  • Semiconductor devices processing
  • MEMS & Nanoelectronic devices
  • Materials & heterostructures
  • VLSI circuits & systems
  • Semiconductor devices & physics
  • Polycrystalline and Epitaxial silicon technology
  • Non-classical CMOS technology, MOSFET models & parameter extraction
  • Science of materials
  • Next generation photovoltaics
  • Memory & spin devices, quantum phenomena in nanostructures
  • Bioelectronics
Class Routine

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  1. Peer reviewer of the Nano letters, Sensors & Actuators B: Chemical, IEEE Transaction of Electron Devices, IEEE Electron Devices Letters, IEEE Transaction on Nanotechnology, ECS Journal of Solid-State Science & Technology, Electrochemical & Solid-State Letters, Material Letters, International Journal of Nanotechnology, Journal of Electrical Engineering-IEB Bangladesh and Advances in Molecular Imaging (SCIRP).
  2. Reviewer for projects submitted in the National Science Foundation (NSF), USA.
  3. Reviewer for projects submitted in the Engineering & Physical Sciences Research Council (EPSRC), UK.
  4. D. Member of London Technology Network, UK.
  5. Member of the Nano-science & Technology Institute (NSTI), USA.
  6. Advisor of the National Utilization Committee for Nanofabrication Facility, Bangladesh, Bangladesh Atomic Energy Commission, Dhaka, Bangladesh.
  7. Member of Institution of Engineers (IEB), Bangladesh.
  8. Editorial board member, Advances in Molecular Imaging, Scientific Research Publishing (SCIRP), China.
  9. Editorial board member, Open Access Journal opf Physics, Sryahwa Publications, India.
  10. Editorial board member, SF Journal of Nanochemistry & Nanotechnology, Science Forecast Publications LLF, USA.
  11. Guest Member of Southampton Nanofabrication Center, UK.