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Dr. Khairul Alam

Professor

Department of Electrical & Electronic Engineering

East West University, Dhaka, Bangladesh

Email: kalam@ewubd.edu

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Ph.D. in Electrical Engineering, University of California, Riverside
Master’s in Electrical Engineering, Bangladesh University of Engineering and Technology
Bachelor’s in Electrical Engineering, Bangladesh University of Engineering and Technology

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Journal

Khairul Alam, Shinichi Takagi, and Mitsuru Takenaka, “A Ge ultrathin-body n-channel tunnel FET: Effects of orientation”, IEEE Transactions on Electron Devices, vol. 61(11), pp. 3594-3600, 2014 (PDF)

Somaia S. Sylvia, K. M. Masum Habib, M. Abul Khayer, Khairul Alam, Mahesh Neupane, and Roger Lake, “Effects of random, discrete source dopant distribution on nanowire tunnel FETs”, IEEE Transactions on Electron Devices, vol. 61(6), pp. 2208-2214, 2014 (PDF)

Khairul Alam, Shinichi Takagi, and Mitsuru Takenaka, “Strain-modulated L-valley ballistic-transport in (111) GaAs ultrathin-body nMOSFETs”, IEEE Transactions on Electron Devices , vol. 61(5), pp. 1335-1340, 2014

Khairul Alam, Shinichi Takagi, and Mitsuru Takenaka, “Analysis and comparison of L valley transport in GaAs, GaSb, and Ge ultrathin-body ballistic nMOSFETs”, IEEE Transactions on Electron Devices, vol. 60(12), pp. 4213-4218, 2013

Somaia Sarwat Sylvia, M. Abul Khayer, Khairul Alam and Roger K. Lake, “On the effect of random source doping distribution in nanowire Tunnel FETs”, TECHCON, September 9-10, Austin, Texas, USA, 2013

Khairul Alam, Shinichi Takagi, and Mitsuru Takenaka, “Thickness dependent performance of (111) GaAs UTB nMOSFETs”, 16th International Workshop on Computational Electronics, June 4-7, Nara, Japan, pp. 136-137, 2013

Somaia Sarwat Sylvia, M. Abul Khayer, Khairul Alam, Hong-Hyun Park, Gerhard Klimeck, and Roger K. Lake,“Discrete Random Distribution of Source Dopants in Nanowire Tunnel Transistors (TFETs)”, APS March Meeting, Baltimore, Maryland, March 18-22 , 2013

Khairul Alam and Roger Lake, “Monolayer MoS2 transistors beyond the technology road map”, IEEE Transactions on Electron Devices , vol. 59(12), pp. 3250-3254, 2012

Somaia Sylvia, M. Abul Khayer, Khairul Alam, and Roger Lake, “Doping, tunnel barrier, and cold carriers in InAs and InSb nanowire tunnel transistors”, IEEE Transactions on Electron Devices, vol. 59(11), pp. 2996-3001, 2012

Somaia Sylvia, Hong-Hyun Park, M. Abul Khayer, Khairul Alam, Gerhard Klimeck, and Roger Lake, “Material Selection for Minimizing Direct Tunneling in Nanowire Transistors”, IEEE Transactions on Electron Devices,vol. 59(8), pp. 2064-2069, 2012

Khairul Alam, “Uniaxial stress modulated electronic properties of a free standing InAs nanowire”,IEEE Transactions on Electron Devices, vol. 59(3), pp. 661-665, 2012

Somaia Sarwat Sylvia, Mahesh Neupane, M. Abul Khayer, Khairul Alam, and Roger K. Lake, “Material Selection for Nanowire FETs and TFETs”, 8th Annual FENA Review, Los Angeles, CA, Feb 7-8, 2012

Khairul Alam and Md. Abu Abdullah, “Effects of gate dielectric constant on the performance of a gate all around InAs nanowire transistor”, IEEE Transactions on Nanotechnology, vol. 11(1), pp. 82-87, 2012

Somaia S Sylvia, M Abul Khayer, Khairul Alam, and Roger K Lake, “Design issue analysis for InAs nanowire tunnel FETs”, Proceedings of SPIE, vol. 8102, p. 81020, 2011

M. Abul Khayer, Somaia Sarwat Sylvia, Khairul Alam, and Roger K. Lake, “Effects of Heavily Doped Source on the Subthreshold Characteristics of Nanowire Tunneling Transistors”, 69th Device Research Conference,June 20-22, Santa Barbara, CA, pp. 51-52, 2011

Somaia Sarwat Sylvia, M. Abul Khayer, Khairul Alam, and Roger K. Lake, “Performance Analysis of Nanowire III-V and CNT Tunnel FETs”, 7th Annual FENA Review, Boston, MA, May 9-11, 2011

Shamim Ahmed and Khairul Alam, “Effects of phonon scattering on the performance of silicon nanowire transistors”, 6th International Conference on Electrical and Computer Engineering, December 18-20, Dhaka, Bangladesh, 2010

Khairul Alam and Redwan N Sajjad, “Electronic properties and orientation-dependent performance of InAs nanowire transistors”, IEEE Transactions on Electron Devices, vol. 57(11), pp. 2880-2885, 2010

Md. Abdul Wahab and Khairul Alam, “Performance comparison of zero-Schottky-barrier and doped contacts carbon nanotube transistors with strain applied”, Nano-Micro Letters, vol. 2, pp. 126-133, 2010

Sishir Bhowmick and Khairul Alam, “Effects of source-drain underlaps on the performance of silicon nanowire on insulator transistors”, nano-micro letters, vol. 2, pp. 83-88, 2010

Md. Abdul Wahab and Khairul Alam, “Performance of zero-Schottky-barrier and doped contact single and double walled carbon nanotube transistors”, Japanese Journal of Applied Physics, vol. 49, pp. 025101(1-6), 2010

Khairul Alam, “Transport and performance of a gate all around InAs nanowire transistor”,Semiconductor Science and Technology, vol. 24, pp. 085003(1-6), 2009

Redwan Sajjad, Khairul Alam, and Quazi Khosru, “Parametrization of silicon nanowire effective mass model from sp3d5s* orbital basis calculations”, Semiconductor Science and Technology, (in press), 2009

Khairul Alam, “Uniaxial strain effects on the performance of a ballistic top gate graphene nanoribbon on insulator transistor”, IEEE Transactions on Nanotechnology, (in press), 2009

Redwan Noor Sajjad and Khairul Alam, “Electronic properties of a strained <100> silicon nanowire”,Journal of Applied Physics, vol. 105, p. 044307, (2009)., 2009

Khairul Alam, “Transport and performance of a zero-Schottky barrier and doped contacts graphene nanoribbon transistors”, Semiconductor Science and Technology, vol. 24, p. 015007, (2009)., 2009

R. N. Sajjad, K. Alam, and Q. D. M. Khosru, “Effects of uniaxial strain on the bandstructures of silicon nanowires”, 5th International Conference on Electrical and Computer Engineering, December 20-22, 2008, Dhaka, Bangladesh, 2008

S. Bhowmick, K. Alam, and Q. D. M. Khosru, “The effects of doping, gate length, and gate dielectric on inverse subthreshold slope and on/off current ratio of a top gate silicon nanowire transistor”, 5th International Conference on Electrical and Computer Engineering, December 20-22, 2008, Dhaka, Bangladesh, 2008

Sishir Bhowmick and Khairul Alam, “Dielectric scaling of a top gate silicon nanowire on insulator transistor”, Journal of Applied Physics, Volume 104, No(12), Page 124308, 2008

M. A. Wahab and K. Alam, “Performance comparison of zero-Schottky-barrier single and double walled carbon nanotube transistors”, 5th International Conference on Electrical and Computer Engineering, December 20-22, 2008, Dhaka, Bangladesh, 2008

Khairul Alam, “Gate dielectric scaling of top gate carbon nanoribbon on insulator transistors”, Journal of Applied Physics, Volume 104, No(7), Page 074313, 2008

Khairul Alam, Nicolas Bruque, and Roger Lake, “Density functional theory mode space approach applied to silicon nanowire FETs”, International Workshop on Computational Electronics, pp. 209-210, October 8-10, Amherst, USA, 2007

Nicolas Bruque, Rajeev Pandey, Khairul Alam, and Roger Lake, “Modeling and Design of Beyond the Roadmap Materials and Devices: Nanowires, Nanotubes, and Molecules”, International Workshop on Electron Devices and Semiconductor Technology, pp. 25-30, Tsinghua University, June 3-4, 2007

Conference

Nicolas Bruque, Rajeev Pandey, Khairul Alam, and Roger Lake, “Electron transport through molecular-carbon nanotube interfaces”, APS March Meeting, vol. 52, March 5–9, Denver, Colorado, 2007 (PDF)

K. Alam and R. Lake, “Role of doping in carbon nanotube transistors with source/drain underlaps “,IEEE Transactions on Nanotechnology, Volume 6, No (6), Pages 652-658, 2007 (PDF)

K. Alam and R. Lake, “Performance metrics of a 5 nm, planar, top gate, carbon nanotube on insulator transistor”, IEEE Transactions on Nanotechnology, Volume 6, No (2), Pages 186-190, 2007

D. Shah, N. Bruque, K. Alam, R. Lake and R. R. Pandey, “Electronic properties of carbon nanotubes calculated from density functional theory and the empirical π-bond model “, Journal of Computational Electronics, published online: April 14, 2007

Rajeev Pandey, Nicolas Bruque, Khairul Alam, and Roger Lake, “Effect of CNT-amide geometry on CNT-molecular conductance”, 232nd ACS National Meeting, September 10-14, San Francisco, California, USA, 2006

K. Alam and R. Lake, “Dielectric scaling of a zero-Schottky-barrier, 5 nm gate, carbon nanotube transistor with source/drain underlaps”, Journal of Applied Physics, Volume 100, Page 024317, 2006

R. R. Pandey, N. Bruque, K. Alam, and R. Lake, “Carbon nanotube-molecular resonant tunneling diode”,Physica Status Solidi (a), Volume 203, Page R5, 2006

N. Bruque, K. Alam, R. Pandey, R. Lake, X. Wang, F. Liu, C. Ozkan, M. Ozkan, and K. Wang, “Self-assembled carbon nanotubes for electronic circuit and device applications”, Journal of Nano and Optoelectronics,Volume 1, Page 74, 2006

K. Alam, N. Bruque, R. Pandey, and R. Lake, “Performance, design, and modeling of bio-assembled carbon nanotube FETs”, First International Nanotechnology Conference on Communication and Cooperation, June 2005, San Francisco, California, USA, 2005

K. Alam and R. Lake, “Optimal design and Coulomb blockade suppressed leakage of carbon nanotube transistors”, 63rd Annual Device Research Conference, June 20-23, 2005, Santa Barbara, California, USA, 2005

K. Alam, R. Lake, and N. Bruque, “High performance carbon nanotube transistors with underlap gates and Coulomb blockade suppressed leakage”, Techcon Conference, October 24-26, 2005, Portland, Oregon, USA, 2005

K. Alam and R. Lake, “Performance of 2 nm gate length carbon nanotube field-effect transistors with source/drain underlaps”, Applied Physics Letters, Volume 87, Page 073104, 2005

K. Alam and R. Lake, “Leakage and performance of zero-Schottky-barrier carbon nanotube transistors”, Journal of Applied Physics, Volume 98, Page 064307, 2005

Y. Zheng, C. Rivas, R. Lake, K. Alam, T. B. Boykin, and G. Klimeck, “Electronic properties of silicon nanowires”, IEEE Transactions on Electron Devices, Volume 52, No(6), Pages 1097-1103, 2005

K. Alam and R. Lake, “Near ideal operation of nanometer gate length carbon nanotube FETs”, APS March Meeting, March 21-25, 2005, Los Angeles, California, USA, 2005

K. Alam and R. Lake, “The effect of source/drain extension asymmetry on the leakage current of ohmicly-contacted carbon nanotube FETs”, NSTI Nanotechnology conference, May 8-12, 2005, Anaheim, California, USA, 2005

Y. Zheng, R. Lake, K. Alam, C. Rivas, T. B. Boykin, and G. Klimeck, “Electronic properties of silicon nanowires”, 10th International Workshop on Computational Electronics, (IEEE Cat. No.04EX915), IEEE, 2004, pp. 82-83, Pisactaway, NJ, USA, 2004

Khairul Alam and Anisul Haque, “Modeling of hole direct tunneling gate current in pMOS devices”, 2nd International Conference on Electrical and Computer Engineering, December 26-28, pp. 76-79, Dhaka, Bangladesh, 2002

A. Haque and K. Alam, “Accurate modeling of direct tunneling hole current in p-metal-oxide-semiconductor devices”, Applied Physics Letters, Volume 81, Page 667, 2002

K. Alam, S. Zaman, M. M. Chowdhury, M. R. Khan, and Anisul Haque, “Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistor”, Journal of Applied Physics, Vol. 92, No. 2, pp. 937-943, 2002

Electron transport, strain engineering
and photovoltaics of nanostructures
especially silicon, germaniumIII-V
and 2D materials

Course Outline

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Course Material

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Class Routine

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