AHaque-2016
PHONE

Office:  303

EMAIL

ahaque@ewubd.edu

PERSONAL WEB

Dr. Anisul Haque

Professor
Department of Electrical & Electronic Engineering

Ph.D. in ECE, Clarkson University, USA
M.S. in EE, Texas A & M University, USA
M.Sc. in EEE, BUET
B.Sc. in EEE, BUET

Nanoelectronic transistors
Quantum electron transport
Compact MOSFET modeling
Quantum Electronics

Journal Publication

Urmita Sikder and Anisul Haque, “Optimization of idealized quantum dot intermediate band solar cells considering spatial variation of generation rates”, IEEE Access, Vol. 1, pp. 363-370, 2013

A. T. M. Golam Sarwar, M. R. Siddiqui, Md. M. Satter, and Anisul Haque, “On the enhancement of the drain current in Indium rich InGaAs surface channel MOSFETs”, IEEE Transactions on Electron Devices, vol. 59, no. 6, pp.1653-1660, 2012

Md. M. Satter, A. E. Islam, D. Varghese, M. A. Alam, and Anisul Haque, “A Self-Consistent Algorithm to Extract Interface Trap States of MOS Devices on Alternative High-Mobility Substrates”, Solid-State Electronics , Vol. 56, No. 1, pp. 141-147, 2011

Md. M. Satter and Anisul Haque, “Modeling Effects of Interface Trap States on the Gate C-V Characteristics of MOS Devices on Alternative High-Mobility Substrates”, Solid-State Electronics, Vol. 54, No. 6, pp. 621-627, 2010

M. A. Karim and Anisul Haque, “A Physically Based, Accurate Model for Quantum Mechanical Correction to the Surface Potential of Nano-Scale MOSFETs”, IEEE Transactions on Electron Devices, Vol. 57, No. 2, pp. 496 – 502, 2010

A. I. Khan, M. K. Ashraf, and Anisul Haque, “Wave function penetration effects on ballistic drain current modeling and MOSFET scaling”, Journal of Applied Physics, Vol. 105, No. 6, pp. 064505(1-5), 2009

M. K. Ashraf, A. I. Khan, and Anisul Haque, “Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on (100) and (110) silicon surfaces”, Solid-State Electronics, Vol. 53, No. 3, pp. 271 – 275, 2009

D. Plumwongrot, T. Maruyama, Anisul Haque, H. Yagi, K. Miura, Y. Nishimoto and S. Arai, “Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures”, Japanese Journal of Applied Physics, Vol. 47, Part 1, No. 5A, pp. 3735-3741, 2008

A. M. Sonnet, M. A. Khayer and Anisul Haque, “Analysis of compressively strained GaInAsP/InP quantum wire electro-absorption modulators”, IEEE Journal of Quantum Electronics, Vol. 43, No. 12, pp. 1198-1203, 2007

M. Itrat B. Shams, K. M. Masum Habib, Q. D. M. Khosru, A. N. M. Zainuddin and Anisul Haque, “On the physically based compact gate C-V model for ultrathin gate dielectric MOS devices using the modified Airy function approximation”, IEEE Transactions on Electron Devices, Vol. 54, No. 9, pp. 2566-2569, 2007

F. Ferdous and Anisul Haque, “Effect of elastic strain redistribution on electronic band structures of compressively strained GaInAsP/InP membrane quantum wires”, Journal of Applied Physics, Vol. 101, No. 9, pp. 093106 (1-5), 2007

A. N. M. Zainuddin and Anisul Haque, “An analytical model for electrostatics of strained-Si n-type metal-oxide-semiconductor devices”, Semiconductor Science and Technology, Vol. 22, No. 2, pp. 125-127, 2007

A. E. Islam and Anisul Haque, “Accumulation gate capacitance of MOS devices with ultra-thin high-K gate dielectrics: modeling and characterization”, IEEE Transactions on Electron Devices, Vol. 53, No. 6, pp. 1364-1372, 2006

M. A. Khayer and Anisul Haque, “Analysis of the linewidth enhancement factor (α-factor) in compressively strained InGaAsP quantum wire lasers”, Journal of Applied Physics, Vol. 100, No. 11, pp. 113108(1-6), 2006

F. Ferdous and Anisul Haque, “Elastic strain relaxation in GaInAsP/InP membrane quantum wire lasers”, Semiconductor Science and Technology, Vol. 21, No. 12, pp. 1600-1604, 2006

A. N. M. Zainuddin and Anisul Haque, “Threshold voltage reduction in strained-Si/SiGe MOS devices due to a difference in the dielectric constants of Si and Ge”, IEEE Transactions on Electron Devices, Vol. 52, No. 12, pp. 2812-2814, 2005

Anisul Haque, T. Maruyama, H. Yagi, T. Sano, P. Dhanorm and S. Arai, “Anomalous in-plane polarization dependence of optical gain in compressively strained GaInAsP/InP quantum wire lasers”, IEEE Journal of Quantum Electronics, Vol. 40, No. 9, pp. 1344-1351, 2004

H. Yagi, T. Sano, K. Ohira, P. Dhanorm, T. Maruyama, Anisul Haque, S. Tamura and S. Arai, “GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes”, Japanese Journal of Applied Physics, Vol. 43, No. 6A, pp. 3401-3409, 2004

M. M. A. Hakim and Anisul Haque, “Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics”, Solid-State Electronics, Vol. 48, No. 7, pp. 1095-1100, 2004

Anisul Haque, H. Yagi, T. Sano, T. Maruyama and S. Arai, “Electronic band structures of GaInAsP/InP vertically stacked multiple quantum-wires with strain-compensating barriers”, Journal of Applied Physics, Vol. 94, No. 3, pp. 2018-2023, 2003

H. Yagi, T. Sano, K. Ohira, T. Maruyama, Anisul Haque and S. Arai, “Room temperature-continuous wave operation of GaInAsP/InP multiple-quantum-wire lasers by dry etching and regrowth method”,Japanese Journal of Applied Physics, Vol. 42, Part 2, No. 7A, pp. L748-L750, 2003

T. Sano, H. Yagi, K. Muranushi, S. Tamura, T. Maruyama, Anisul Haque and S. Arai, “Multiple-quantum-wire structures with good size uniformity fabricated by CH4/H2 dry etching and organometallic vapor-phase-epitaxial regrowth”, Japanese Journal of Applied Physics, Vol. 42, Part 1, No. 6A, pp. 3471-3472, 2003

M. M. A. Hakim and Anisul Haque, “A computationally efficient quantum-mechanical technique to calculate the direct tunneling gate current in metal-oxide-semiconductor structures”, Journal of Applied Physics, Vol. 94, No. 3, pp. 2046-2052, 2003

M. Yunus and Anisul Haque, “Wave function penetration effects on current-voltage characteristics of ballistic metal-oxide-semiconductor transistors”, Journal of Applied Physics, Vol. 93, No. 1, pp. 600-604, 2003

M. M. A. Hakim and Anisul Haque, “Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep sub-micron MOSFETs”, IEEE Transactions on Electron Devices, Vol. 49, No. 9, pp. 1669-1671, 2002

Anisul Haque and M. Z. Kauser, “A comparison of wave function penetration effects on gate capacitance in deep submicron n- and p-MOSFETs”, IEEE Transactions on Electron Devices, Vol. 49, No. 9, pp. 1580-1587, 2002

Anisul Haque and K. Alam, “Accurate modeling of direct tunneling hole current in p-metal-oxide-semiconductor devices”, Applied Physics Letters, Vol. 81, No. 4, pp. 667-669, 2002

M. Z. Kauser, M. S. Hasan and Anisul Haque, “Effects of wave function penetration into gate oxide on self-consistent modeling of scaled MOSFETs”, IEEE Transactions on Electron Devices, Vol. 49, No. 4, pp. 693-695, 2002

M. M. Chowdhury, S. Zaman, Anisul Haque and M. R. Khan, “Determination of electron trap distribution in gate-oxide region of deep submicron metal-oxide-semiconductor structure from direct tunneling gate current”, Applied Physics Letters, Vol. 80, No. 12, pp. 2123-2125, 2002

K. Alam, S. Zaman, M. M. Chowdhury, M. R. Khan, and Anisul Haque, “Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistor”, Journal of Applied Physics, Vol. 92, No. 2, pp. 937-943, 2002

A. Rahman and Anisul Haque, “A study into the broadening of quantized inversion layer states in deep submicron MOSFETs”, Solid-State Electronics, Vol. 45, No. 5, pp. 755-760, 2001

Anisul Haque and M. R. Quddus, “Room temperature simulation of a novel quantum wire transistor”,Solid-State Electronics, Vol. 45, No. 3, pp. 519-523, 2001

Anisul Haque, A. Rahman and I. B. Chowdhury, “On the use of appropriate boundary conditions to calculate the normalized wavefunctions in the inversion layers of MOSFETs with ultra-thin gate-oxides”, Solid-State Electronics, Vol. 44, No. 10, pp. 1833-1836, 2000

Anisul Haque and A. N. Khondker, “Quantum transport in mesoscopic devices: current conduction in quantum wire structures”, Journal of Applied Physics, Vol. 87, No. 5, pp. 2553-2560, 2000

Anisul Haque and A. N. Khondker, “An efficient technique to calculate normalized wavefunctions in arbitrary one dimensional quantum well structures”, Journal of Appled Physics, Vol. 84, No. 10, pp. 5802-5804, 1998

A. N. Khondker and Anisul Haque, “Nonequilibrium distribution functions in mesoscopic devices”, Physical Review B, Vol. 55, No. 23, pp. 15798-15803, 1997

A. N. Khondker and Anisul Haque, “Random impurity and phonon scattering processes in mesoscopic devices”, Physical Review B, Vol. 55, No. 7, pp. 4645-4648, 1997

Anisul Haque and A. N. Khondker, “On the conductance and the conductivity of disordered quantum wires”, Journal of Applied Physics, Vol. 80, No. 7, pp. 3876-3880, 1996

Anisul Haque and A. N. Khondker, “Disorder induced enhancement of the quantum size effects in quantum wires with a tunnel barrier”, Physical Review B, Vol. 54, No. 7, pp. 5016-5019, 1996

Anisul Haque and A. N. Khondker, “Electron transport in the presence of random impurities: transition from ballistic to diffusive regimes”, Physical Review B, Vol. 52, No. 15, pp. 11193-11200, 1995

Anisul Haque and A. N. Khondker, “Nonequilibrium transport equation for nonlocal impurity self-energy within the Keldysh formulation”, Physical Review B, Vol. 49, No. 19, pp. 14007-14009, 1994

Anisul Haque, M. Haque and M. R. Khan, “Energy band calculation for periodic potential structures using quantum mechanical impedance”, Journal of Applied Physics, Vol. 68, No. 4, pp. 1661-1664, 1990

+ Academic Background

Ph.D. in ECE, Clarkson University, USA
M.S. in EE, Texas A & M University, USA
M.Sc. in EEE, BUET
B.Sc. in EEE, BUET

+ Professional Experience
+ Research Interest

Nanoelectronic transistors
Quantum electron transport
Compact MOSFET modeling
Quantum Electronics

+ Selected Publications

Journal Publication

Urmita Sikder and Anisul Haque, “Optimization of idealized quantum dot intermediate band solar cells considering spatial variation of generation rates”, IEEE Access, Vol. 1, pp. 363-370, 2013

A. T. M. Golam Sarwar, M. R. Siddiqui, Md. M. Satter, and Anisul Haque, “On the enhancement of the drain current in Indium rich InGaAs surface channel MOSFETs”, IEEE Transactions on Electron Devices, vol. 59, no. 6, pp.1653-1660, 2012

Md. M. Satter, A. E. Islam, D. Varghese, M. A. Alam, and Anisul Haque, “A Self-Consistent Algorithm to Extract Interface Trap States of MOS Devices on Alternative High-Mobility Substrates”, Solid-State Electronics , Vol. 56, No. 1, pp. 141-147, 2011

Md. M. Satter and Anisul Haque, “Modeling Effects of Interface Trap States on the Gate C-V Characteristics of MOS Devices on Alternative High-Mobility Substrates”, Solid-State Electronics, Vol. 54, No. 6, pp. 621-627, 2010

M. A. Karim and Anisul Haque, “A Physically Based, Accurate Model for Quantum Mechanical Correction to the Surface Potential of Nano-Scale MOSFETs”, IEEE Transactions on Electron Devices, Vol. 57, No. 2, pp. 496 – 502, 2010

A. I. Khan, M. K. Ashraf, and Anisul Haque, “Wave function penetration effects on ballistic drain current modeling and MOSFET scaling”, Journal of Applied Physics, Vol. 105, No. 6, pp. 064505(1-5), 2009

M. K. Ashraf, A. I. Khan, and Anisul Haque, “Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on (100) and (110) silicon surfaces”, Solid-State Electronics, Vol. 53, No. 3, pp. 271 – 275, 2009

D. Plumwongrot, T. Maruyama, Anisul Haque, H. Yagi, K. Miura, Y. Nishimoto and S. Arai, “Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures”, Japanese Journal of Applied Physics, Vol. 47, Part 1, No. 5A, pp. 3735-3741, 2008

A. M. Sonnet, M. A. Khayer and Anisul Haque, “Analysis of compressively strained GaInAsP/InP quantum wire electro-absorption modulators”, IEEE Journal of Quantum Electronics, Vol. 43, No. 12, pp. 1198-1203, 2007

M. Itrat B. Shams, K. M. Masum Habib, Q. D. M. Khosru, A. N. M. Zainuddin and Anisul Haque, “On the physically based compact gate C-V model for ultrathin gate dielectric MOS devices using the modified Airy function approximation”, IEEE Transactions on Electron Devices, Vol. 54, No. 9, pp. 2566-2569, 2007

F. Ferdous and Anisul Haque, “Effect of elastic strain redistribution on electronic band structures of compressively strained GaInAsP/InP membrane quantum wires”, Journal of Applied Physics, Vol. 101, No. 9, pp. 093106 (1-5), 2007

A. N. M. Zainuddin and Anisul Haque, “An analytical model for electrostatics of strained-Si n-type metal-oxide-semiconductor devices”, Semiconductor Science and Technology, Vol. 22, No. 2, pp. 125-127, 2007

A. E. Islam and Anisul Haque, “Accumulation gate capacitance of MOS devices with ultra-thin high-K gate dielectrics: modeling and characterization”, IEEE Transactions on Electron Devices, Vol. 53, No. 6, pp. 1364-1372, 2006

M. A. Khayer and Anisul Haque, “Analysis of the linewidth enhancement factor (α-factor) in compressively strained InGaAsP quantum wire lasers”, Journal of Applied Physics, Vol. 100, No. 11, pp. 113108(1-6), 2006

F. Ferdous and Anisul Haque, “Elastic strain relaxation in GaInAsP/InP membrane quantum wire lasers”, Semiconductor Science and Technology, Vol. 21, No. 12, pp. 1600-1604, 2006

A. N. M. Zainuddin and Anisul Haque, “Threshold voltage reduction in strained-Si/SiGe MOS devices due to a difference in the dielectric constants of Si and Ge”, IEEE Transactions on Electron Devices, Vol. 52, No. 12, pp. 2812-2814, 2005

Anisul Haque, T. Maruyama, H. Yagi, T. Sano, P. Dhanorm and S. Arai, “Anomalous in-plane polarization dependence of optical gain in compressively strained GaInAsP/InP quantum wire lasers”, IEEE Journal of Quantum Electronics, Vol. 40, No. 9, pp. 1344-1351, 2004

H. Yagi, T. Sano, K. Ohira, P. Dhanorm, T. Maruyama, Anisul Haque, S. Tamura and S. Arai, “GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes”, Japanese Journal of Applied Physics, Vol. 43, No. 6A, pp. 3401-3409, 2004

M. M. A. Hakim and Anisul Haque, “Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics”, Solid-State Electronics, Vol. 48, No. 7, pp. 1095-1100, 2004

Anisul Haque, H. Yagi, T. Sano, T. Maruyama and S. Arai, “Electronic band structures of GaInAsP/InP vertically stacked multiple quantum-wires with strain-compensating barriers”, Journal of Applied Physics, Vol. 94, No. 3, pp. 2018-2023, 2003

H. Yagi, T. Sano, K. Ohira, T. Maruyama, Anisul Haque and S. Arai, “Room temperature-continuous wave operation of GaInAsP/InP multiple-quantum-wire lasers by dry etching and regrowth method”,Japanese Journal of Applied Physics, Vol. 42, Part 2, No. 7A, pp. L748-L750, 2003

T. Sano, H. Yagi, K. Muranushi, S. Tamura, T. Maruyama, Anisul Haque and S. Arai, “Multiple-quantum-wire structures with good size uniformity fabricated by CH4/H2 dry etching and organometallic vapor-phase-epitaxial regrowth”, Japanese Journal of Applied Physics, Vol. 42, Part 1, No. 6A, pp. 3471-3472, 2003

M. M. A. Hakim and Anisul Haque, “A computationally efficient quantum-mechanical technique to calculate the direct tunneling gate current in metal-oxide-semiconductor structures”, Journal of Applied Physics, Vol. 94, No. 3, pp. 2046-2052, 2003

M. Yunus and Anisul Haque, “Wave function penetration effects on current-voltage characteristics of ballistic metal-oxide-semiconductor transistors”, Journal of Applied Physics, Vol. 93, No. 1, pp. 600-604, 2003

M. M. A. Hakim and Anisul Haque, “Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep sub-micron MOSFETs”, IEEE Transactions on Electron Devices, Vol. 49, No. 9, pp. 1669-1671, 2002

Anisul Haque and M. Z. Kauser, “A comparison of wave function penetration effects on gate capacitance in deep submicron n- and p-MOSFETs”, IEEE Transactions on Electron Devices, Vol. 49, No. 9, pp. 1580-1587, 2002

Anisul Haque and K. Alam, “Accurate modeling of direct tunneling hole current in p-metal-oxide-semiconductor devices”, Applied Physics Letters, Vol. 81, No. 4, pp. 667-669, 2002

M. Z. Kauser, M. S. Hasan and Anisul Haque, “Effects of wave function penetration into gate oxide on self-consistent modeling of scaled MOSFETs”, IEEE Transactions on Electron Devices, Vol. 49, No. 4, pp. 693-695, 2002

M. M. Chowdhury, S. Zaman, Anisul Haque and M. R. Khan, “Determination of electron trap distribution in gate-oxide region of deep submicron metal-oxide-semiconductor structure from direct tunneling gate current”, Applied Physics Letters, Vol. 80, No. 12, pp. 2123-2125, 2002

K. Alam, S. Zaman, M. M. Chowdhury, M. R. Khan, and Anisul Haque, “Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistor”, Journal of Applied Physics, Vol. 92, No. 2, pp. 937-943, 2002

A. Rahman and Anisul Haque, “A study into the broadening of quantized inversion layer states in deep submicron MOSFETs”, Solid-State Electronics, Vol. 45, No. 5, pp. 755-760, 2001

Anisul Haque and M. R. Quddus, “Room temperature simulation of a novel quantum wire transistor”,Solid-State Electronics, Vol. 45, No. 3, pp. 519-523, 2001

Anisul Haque, A. Rahman and I. B. Chowdhury, “On the use of appropriate boundary conditions to calculate the normalized wavefunctions in the inversion layers of MOSFETs with ultra-thin gate-oxides”, Solid-State Electronics, Vol. 44, No. 10, pp. 1833-1836, 2000

Anisul Haque and A. N. Khondker, “Quantum transport in mesoscopic devices: current conduction in quantum wire structures”, Journal of Applied Physics, Vol. 87, No. 5, pp. 2553-2560, 2000

Anisul Haque and A. N. Khondker, “An efficient technique to calculate normalized wavefunctions in arbitrary one dimensional quantum well structures”, Journal of Appled Physics, Vol. 84, No. 10, pp. 5802-5804, 1998

A. N. Khondker and Anisul Haque, “Nonequilibrium distribution functions in mesoscopic devices”, Physical Review B, Vol. 55, No. 23, pp. 15798-15803, 1997

A. N. Khondker and Anisul Haque, “Random impurity and phonon scattering processes in mesoscopic devices”, Physical Review B, Vol. 55, No. 7, pp. 4645-4648, 1997

Anisul Haque and A. N. Khondker, “On the conductance and the conductivity of disordered quantum wires”, Journal of Applied Physics, Vol. 80, No. 7, pp. 3876-3880, 1996

Anisul Haque and A. N. Khondker, “Disorder induced enhancement of the quantum size effects in quantum wires with a tunnel barrier”, Physical Review B, Vol. 54, No. 7, pp. 5016-5019, 1996

Anisul Haque and A. N. Khondker, “Electron transport in the presence of random impurities: transition from ballistic to diffusive regimes”, Physical Review B, Vol. 52, No. 15, pp. 11193-11200, 1995

Anisul Haque and A. N. Khondker, “Nonequilibrium transport equation for nonlocal impurity self-energy within the Keldysh formulation”, Physical Review B, Vol. 49, No. 19, pp. 14007-14009, 1994

Anisul Haque, M. Haque and M. R. Khan, “Energy band calculation for periodic potential structures using quantum mechanical impedance”, Journal of Applied Physics, Vol. 68, No. 4, pp. 1661-1664, 1990